BAV303 datasheet, PDF - EEWORLD Datasheet

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BAV303: DescriptionRectifier Diode, 1 Element, 0.2A, Silicon, GLASS, MICROMELF-2; CategoryDiscrete semiconductor diode; File Size72KB，2 Pages; ManufacturerPromax-Johnton Electronic Corporation

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BAV303 Overview

Rectifier Diode, 1 Element, 0.2A, Silicon, GLASS, MICROMELF-2

BAV303 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Promax-Johnton Electronic Corporation
Parts packaging code	MELF
package instruction	O-LELF-R2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LELF-R2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.3 W
Certification status	Not Qualified
Maximum reverse recovery time	0.075 µs
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED

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DATA SHEET

BAV301~BAV303

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE

100 to 200 Volts

POWER

300 mWatts

MICRO-MELF

Unit : inch (mm)

FEATURES

• Fast switching Speed.

• Surface Mount Package Ideally Suited For Automatic Insertion.

• Silicon Epitaxal Planar Construction.

.049(1.25)

.047(1.2)DIA.

• Pb free product are available :

99% Sn above can meet RoHS environment

substance directive request

MECHANICAL DATA

•

Case: Micro Melf, Glass

Terminals: Solderable per MIL-STD-750, Method 2026

Polarity: Cathode Band

Marking: Cathode Band Only

Weight: 0.01 grams

T/R - 2.5K per 7" plastic Reel

.043(1.1)

.008(0.2)

.079(2.0)

.071(1.8)

• Packing information

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(T

J

=25°C unless otherwise noted)

PARAMETER

Reverse Voltage

Peak Reverse Voltage

Rectified Current (Average), Half Wave Rectification with Resistive Load

and f >=50 Hz

Peak Forward Surge Current, t=1.0s

Power Dissipation Derate Above at 25

O

C

Maximum Forward Voltage, IF = 100mA

Maximum DC Reverse Current at Rated DC Blocking Voltage T

J

= 25

O

C

Typical Junction Capacitance( Note 1)

Maximum Reverse Recovery (Note 2)

Maximum Thermal Resistance

Operation Junction Storage Temperature Range

SYMBOL

V

R

V

RM

I

O

I

FSM

P

D

V

F

I

R

CJ

T

RR

RθJA

T

STG

BAV301

100

120

BAV302

150

200

1.0

300

1.0

0.1

0.95

75

350

-65 TO +175

O

BAV303

200

250

UNITS

V

mA

A

mW

V

uA

pF

ns

C/W

O

C

NOTE:

1. CJ at V

R

=0, f=1MHZ

2. From I

F

=10mA to I

R

=-1mA, V

R

=6Volts, R

L

=100Ω

STAD-JAN.27.2004

PAGE . 1

BAV303 Related Products

	BAV303	BAV301
Description	Rectifier Diode, 1 Element, 0.2A, Silicon, GLASS, MICROMELF-2	Rectifier Diode, 1 Element, 0.2A, Silicon, GLASS, MICROMELF-2
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation
Parts packaging code	MELF	MELF
package instruction	O-LELF-R2	O-LELF-R2
Contacts	2	2
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LELF-R2	O-LELF-R2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	2
Maximum output current	0.2 A	0.2 A
Package body material	GLASS	GLASS
Package shape	ROUND	ROUND
Package form	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Maximum power dissipation	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified
Maximum reverse recovery time	0.075 µs	0.075 µs
surface mount	YES	YES
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	WRAP AROUND	WRAP AROUND
Terminal location	END	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED

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