This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly
different in format due to electronic conversion processes. Actual technical content will be the same.
The documentation and process conversion measures necessary to
comply with this revision shall be completed by 10 November 1999.
INCH POUND
MIL-PRF-19500/356F
10 August 1999
SUPERSEDING
MIL-S-19500/356E
11 November 1996
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR
TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,
1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,
AND C AND D TOLERANCE SUFFIX DEVICES
JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Five levels of product
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for
each unencapsulated device type die.
1.2 Physical dimensions. See figures 1, 2, 3, 4, and 5.
1.3 Maximum ratings. Maximum ratings are as shown in columns 8 and 10 of table IV herein, and as follows:
P
T
= 5 W at T
L
= +65°C, L = .375 inch (9.53 mm), derate 45 mW/°C above T
L
= +65°C (1N4954 through 1N4996). 1/
P
T
= 5 W at T
L
= +25°C, L = .375 inch (9.53 mm), derate 33 mW/°C above T
L
= +25°C (1N5968, 1N5969, 1N6632 through
1N6637). 1/
P
T
= 5 W at T
EC
= +125°C, derate 100 mW/°C above T
EC
= +125°C for US suffix devices.
-55°C < T
op
< +175°C (ambient); -65°C < T
STG
< +175°C (ambient).
Barometric pressure reduced (high altitude operation): 8 mm Hg.
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2, 12, and 14 of table IV herein,
and as follows:
R
JL
= 22°C/W (max) at L = .375 inch (9.53 mm) (1N4954 through 1N4996). 1/
R
JL
= 30°C/W (max) at L = .375 inch (9.53 mm) (1N5968, 1N5969, 1N6632 through 1N6637). 1/
R
JEC
= 7°C/W (max) (surface mount) (1N4954 through 1N4996).
R
JEC
= 10°C/W (max) (surface mount) (1N5968, 1N5969, 1N6632 through 1N6637).
1/ Does not apply to surface mount devices.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/356F
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not
include documents cited in other sections of this specification or recommended for additional information or as examples. While
every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified
requirements in documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this
document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of
the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see
6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
STANDARD
MILITARY
MIL-STD-750
- Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of
this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for
listing on the applicable qualified products list before contract award (see 4.2 and 6.3).
3.2 Associated detail specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified
herein.
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in
MIL-PRF-19500, and as follows.
3.3.1 Symbols.
C suffix ............................................
D suffix ............................................
T
EC
...................................................
US suffix..........................................
JANHC ............................................
JANKC.............................................
±2 percent voltage tolerance.
±1 percent voltage tolerance.
Temperature, end cap.
Unleaded or surface mounted devices (square end caps).
High reliability product assurance level for unencapsulated devices.
Space reliability product assurance level for unencapsulated devices.
3.4 Design, construction, and physical dimensions. The design, construction, and physical dimensions for the purpose of
interchangeability shall be as specified in on figures 1, 2, 3, and 4 herein.
3.4.1 Construction. Shall be in accordance with MIL-PRF-19500, A.3.15.1, A.3.15.2, A.3.15.3, A.3.15.6, A.3.15.7, A.3.15.8 and
this document. "US" version devices shall be structurally identical to the axial leaded type except for lead attachment.
3.4.1.1 Diodes with V
Z
6.8 V dc. Diodes with V
Z
6.8 V dc shall utilize category I metallurgical bonds (see MIL-PRF-19500).
3.4.1.2 Diodes with V
Z
< 6.8 V dc. Diodes with V
Z
< 6.8 V dc may utilize category I, II, or category III metallurgical bonds (see
MIL-PRF-19500).
2
MIL-PRF-19500/356F
Dimensions
Ltr
BL
BD
LL
LU
LD
Min
.130
.090
1.00
.037
Inches
Max
.300
.145
1.300
.050
.043
Millimeters
3.30
2.92
25.40
0.94
4.95
4.70
33.02
1.27
1.89
Notes
4
3
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimensions BD shall be measured at the largest diameter.
4. Dimension LU defines region of uncontrolled diameter.
FIGURE 1. Physical dimensions, non-surface mount devices.
3
MIL-PRF-19500/356F
Dimensions
Ltr
BL
ECT
S
BD
Min
.200
.019
.003
.137
Inches
Max
.225
.028
---
.148
Min
5.08
0.48
0.08
3.48
Millimeters
Max
5.72
0.71
---
3.76
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions (surface mount devices).
4
MIL-PRF-19500/356F
A version
Dimensions
Ltr
A
B
C
Min
.059 sq
.056 sq
.006
Inches
Max
.072 sq
.065 sq
.012
Millimeters
Min
Max
1.50 sq
1.83 sq
1.42 sq
1.65 sq
0.15
0.30
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Metallization: Top (cathode) -
Silver.
Back (anode) -
Silver.
(See 3.4.3)
FIGURE 3. Physical dimensions JANHCA and JANKCA (die).
5
stm32/stm8
京公网安备 11010802033920号
EEWORLD
