IRHM7054D datasheet, PDF - EEWORLD Datasheet

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IRHM7054D: DescriptionPower Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size229KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRHM7054D Overview

Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

IRHM7054D Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-254AA
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	500 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	35 A
Maximum drain current (ID)	35 A
Maximum drain-source on-resistance	0.03 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	150 W
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	230 ns
Maximum opening time (tons)	275 ns

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PD-90887H

IRHM7054

JANSR2N7394

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

IRHM7054

IRHM3054

IRHM4054

IRHM8054

Radiation Level

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

1000 kRads(Si)

RDS(on)

0.027

0.040

35A*

QPL Part Number

JANSR2N7394

JANSF2N7394

JANSG2N7394

JANSH2N7394

TO-254

60V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD-Hard HEXFET TECHNOLOGY

Description

IR HiRel RAD-Hard HEXFET technology provides high performance

power MOSFETs for space applications. This technology

has over a decade of proven performance and reliability in

satellite applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low Rdson and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features



Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Light Weight

ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

@ V

= 12V, T

= 25°C

dv/dt

STG

Continuous Drain Current

Pulsed Drain Current



Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy



Avalanche Current



Repetitive Avalanche Energy



Peak Diode Recovery dv/dt



Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

*Current is limited by package

For Footnotes refer to the page 2.

35*

140

150

1.2

± 20

500

3.5

-55 to + 150

@ V

= 12V, T

= 100°C Continuous Drain Current

Pre-Irradiation

Units

W/°C

V/ns

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

2016-07-01

IRHM7054D Related Products

	IRHM7054D	IRHM7054PBF	IRHM7054UPBF	IRHM7054DPBF	IRHM7054U
Description	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
Is it lead-free?	Contains lead	Lead free	Lead free	Lead free	Contains lead
Is it Rohs certified?	incompatible	conform to	conform to	conform to	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-254AA	TO-254AA	TO-254AA	TO-254AA	TO-254AA
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-CSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Contacts	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	RADIATION HARDENED	AVALANCHE RATED; RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V	60 V
Maximum drain current (ID)	35 A	35 A	35 A	35 A	35 A
Maximum drain-source on-resistance	0.03 Ω	0.03 Ω	0.03 Ω	0.03 Ω	0.03 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	S-MSFM-P3	S-CSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	CERAMIC, METAL-SEALED COFIRED	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	150 W	150 W	150 W	150 W	150 W
Maximum pulsed drain current (IDM)	200 A	140 A	200 A	200 A	200 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40	40	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	230 ns	150 ns	230 ns	230 ns	230 ns
Maximum opening time (tons)	275 ns	127 ns	275 ns	275 ns	275 ns

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