K4H511638C-ZLA2 datasheet, PDF

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K4H511638C-ZLA2: DescriptionDDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60; Categorystorage storage; File Size238KB，23 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H511638C-ZLA2 Overview

DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60

K4H511638C-ZLA2 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	BGA, BGA60,9X12,40/32
Reach Compliance Code	compliant
Maximum access time	0.75 ns
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e3
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	1
Number of terminals	60
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY
Peak Reflow Temperature (Celsius)	225
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.005 A
Maximum slew rate	0.325 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED

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DDR SDRAM 512Mb C-die (x4, x8, x16)

Preliminary

DDR SDRAM

512Mb C-die DDR SDRAM Specification

60 FBGA with Pb-Free

(RoHS compliant)

Revision 0.0

October. 2004

Rev. 0.0 October. 2004

K4H511638C-ZLA2 Related Products

	K4H511638C-ZLA2	K4H511638C-ZLB0	K4H511638C-ZCB0
Description	DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60	DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60	DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
package instruction	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32
Reach Compliance Code	compliant	compliant	compliant
Maximum access time	0.75 ns	0.75 ns	0.75 ns
Maximum clock frequency (fCLK)	133 MHz	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON
interleaved burst length	2,4,8	2,4,8	2,4,8
JESD-30 code	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
JESD-609 code	e3	e3	e3
memory density	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	16	16
Humidity sensitivity level	1	1	1
Number of terminals	60	60	60
word count	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000
Maximum operating temperature	70 °C	70 °C	70 °C
organize	32MX16	32MX16	32MX16
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	BGA	BGA
Encapsulate equivalent code	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY	GRID ARRAY
Peak Reflow Temperature (Celsius)	225	225	225
power supply	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192
Continuous burst length	2,4,8	2,4,8	2,4,8
Maximum standby current	0.005 A	0.005 A	0.005 A
Maximum slew rate	0.325 mA	0.325 mA	0.325 mA
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	SAMSUNG	SAMSUNG	-

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