IRFF130 datasheet, PDF - EEWORLD Datasheet

IRFF130: DescriptionPower Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size170KB，5 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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IRFF130 Overview

Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	8 A
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	25 W
Maximum power dissipation(Abs)	25 W
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	250 ns
Maximum opening time (tons)	200 ns

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