IRF360PBF datasheet, PDF - EEWORLD Datasheet

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IRF360PBF: DescriptionPower Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size139KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRF360PBF Overview

Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

IRF360PBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	980 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 90518

REPETITIVE A ALANCHE AND dv/dt RATED

HEXFET TRANSISTORS

THRU-HOLE (TO-204AA/AE)

Product Summary

Part Number BVDSS R

DS(on)

IRF360

400V

0.20Ω

25A



IRF360

400V, N-CHANNEL

The HEXFET



technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

TO-3

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Absolute Maximum Ratings

Parameter

ID @ VGS = 0V, TC = 25°C

ID @ VGS = 0V, TC = 100°C

I DM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

100

300

2.4

±20

980

4.0

-55 to 150

Units

W/°C

V/ns

300 (0.063 in. (1.6mm) from case for 10s)

11.5(typical)

www.irf.com

01/24/01

IRF360PBF Related Products

	IRF360PBF
Description	Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	980 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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