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AS3621

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1.3V @ 250uA Drain-source on-resistance: 21mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 1.4W Type: P channel P channel, -30V, -6A, 21mΩ@-10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,3 Pages
ManufacturerANBON SEMICONDUCTOR
Websitehttp://www.formosagr.com/

Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.

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AS3621 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1.3V @ 250uA Drain-source on-resistance: 21mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 1.4W Type: P channel P channel, -30V, -6A, 21mΩ@-10V

AS3621 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C6A
Gate-source threshold voltage1.3V @ 250uA
Drain-source on-resistance21mΩ @ 5A,10V
Maximum power dissipation (Ta=25°C)1.4W
typeP channel

AS3621 Preview

Download Datasheet
AS3621
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
FEATURE
TrenchFET Power MOSFET
SOT-23
APPLICATIONS
Load Switch for Portable Devices
DC/DC Converter
1. GATE
2. SOURCE
3. DRAIN
MARKING: 36 21
Maximum ratings (T
a
=25℃ unless otherwise noted)
Characteristic
特性參數
Drain-Source Voltage
漏極-源極電壓
Gate- Source Voltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
Total Device Dissipation
½耗散功率
T
A
=
25℃環境溫度爲 25℃
Junction
結溫
Storage Temperature
儲存溫度
Symbol
符號
BV
DSS
V
GS
I
D
I
DM
Max
最大值
-30
+12
-6
-30
Unit
單½
V
V
A
A
P
D
1400
mW
T
J
T
stg
150
-55to+150
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 1
AS-3150025
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