STD5NE10-1 datasheet, PDF - EEWORLD Datasheet

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STD5NE10-1: Description5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3; CategoryDiscrete semiconductor The transistor; File Size347KB，9 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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STD5NE10-1 Overview

5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3

STD5NE10-1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TO-251AA
package instruction	IPAK-3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	25 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	25 W
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

STD5NE10-1 Related Products

	STD5NE10-1	STD5NE10T4
Description	5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3	5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
Is it Rohs certified?	conform to	conform to
Maker	STMicroelectronics	STMicroelectronics
Parts packaging code	TO-251AA	TO-252AA
package instruction	IPAK-3	DPAK-3
Contacts	3	3
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	25 mJ	25 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (Abs) (ID)	5 A	5 A
Maximum drain current (ID)	5 A	5 A
Maximum drain-source on-resistance	0.4 Ω	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA	TO-252AA
JESD-30 code	R-PSIP-T3	R-PSSO-G2
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	25 W	25 W
Maximum pulsed drain current (IDM)	20 A	20 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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