IRFU9220 datasheet, PDF - EEWORLD Datasheet

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IRFU9220: Description3.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA; CategoryDiscrete semiconductor The transistor; File Size170KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFU9220 Overview

3.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA

IRFU9220 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	310 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	3.6 A
Maximum drain current (ID)	3.6 A
Maximum drain-source on-resistance	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	42 W
Maximum power dissipation(Abs)	42 W
Maximum pulsed drain current (IDM)	14 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

IRFU9220 Related Products

	IRFU9220	IRFR9220
Description	3.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA	0.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it Rohs certified?	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (Abs) (ID)	3.6 A	3.6 A
Maximum drain current (ID)	3.6 A	3.6 A
Maximum drain-source on-resistance	1.5 Ω	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA	TO-252AA
JESD-30 code	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245	260
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power consumption environment	42 W	42 W
Maximum power dissipation(Abs)	42 W	42 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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