600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Microsemi |
| package instruction | O-PALF-W2 |
| Contacts | 2 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum breakdown voltage | 42.9 V |
| Minimum breakdown voltage | 35.1 V |
| Breakdown voltage nominal value | 39 V |
| Shell connection | ISOLATED |
| Maximum clamping voltage | 56.4 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | O-PALF-W2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Maximum non-repetitive peak reverse power dissipation | 600 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Minimum operating temperature | -65 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | UNIDIRECTIONAL |
| Maximum power dissipation | 5 W |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 31.6 V |
| Maximum reverse current | 5 µA |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal surface | MATTE TIN |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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