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GS840H32B-180I

Description
Cache SRAM, 128KX32, 8ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size626KB,31 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS840H32B-180I Overview

Cache SRAM, 128KX32, 8ns, CMOS, PBGA119, BGA-119

GS840H32B-180I Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codeunknown
ECCN code3A991.B.2.B
Maximum access time8 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density4194304 bit
Memory IC TypeCACHE SRAM
memory width32
Humidity sensitivity level3
Number of functions1
Number of terminals119
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX32
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height2.4 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
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