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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3D to NNCD12D
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3D to NNCD12D Series are into 2PIN Super Mini
Mold Package having allowable power dissipation of 200 mW.
PACKAGE DIMENSIONS
(in millimeters)
2.5 ± 0.15
1.7 ± 0.1
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
0.9 ± 0.1
0 ± 0.05
0.19
Cathode
Indication
APPLICATIONS
• Circuits for Waveform clipper, Surge absorber.
0.11
+0.05
–0.01
• External interface circuit E.S.D protection.
MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
200 mW
85 W (t
T
= 10
µ
s 1 pulse)
150
°C
–55
°C
to +150
°C
Fig. 6
Document No. D11772EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
©
0.3 ± 0.05
1.25 ± 0.1
1996
RF/Wirelessly
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