7-Segment LED-Chip
Preliminary
Radiation
Red
Type
Diffusion type
6/22/2007
Technology
GaAsP/GaAs
EDC-660-19-02
rev. 05/07
Electrodes
P (anode) up
690
24
typ. dimensions (µm)
275
typ. thickness
330 µm
cathode
Au-alloy metalization
anode
Al metalization
Application
This miniature device is an
excellent choice for
applications where small
size and reduced space
are important factors such
as complex displays in
optical devices for
laboratory, measurement,
control- and medical
equipment.
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Temperature coefficient of
λ
C
Operating temperature range
Storage temperature range
Test
сonditions
T
a
= -40..120°
C
Symbol
T
C
(λ
C
)
T
amb
T
stg
Value
0.15
-40 to +120
-40 to +125
Unit
785
nm/K
°
C
°
C
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
1
Forward voltage
Reverse voltage
Luminous intensity/segment
2
I
V
ratio segment to segment
2
I
V
ratio to adjacent chip
Peak wavelength
Spectral bandwidth at 50%
1
2
Symbol
V
F
V
R
I
v
Min
Typ
1.75
Max
2.0
Unit
V
V
I
F
= 5 mA
I
R
= 10 µA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
5
55
80
1.75
2.00
µcd
λ
p
∆λ
0.5
645
655
17
665
nm
nm
Current for one segment
Measured on bare chip on TO-18 header
Labeling
Type
EDC-660-19-02
Lot N°
I
v
(typ) [µcd]
V
F
(typ) [V]
Quantity
Packing:
Chips in wafer pack or on adhesive film with wire-bond side on top
*Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
京公网安备 11010802033920号
EEWORLD
