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K4E171612D-JC45

Description
EDO DRAM, 1MX16, 45ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
Categorystorage    storage   
File Size399KB,35 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4E171612D-JC45 Overview

EDO DRAM, 1MX16, 45ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

K4E171612D-JC45 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOJ
package instructionSOJ, SOJ44,.44
Contacts42
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time45 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J42
JESD-609 codee0
length27.31 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals42
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ44,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height3.76 mm
self refreshNO
Maximum standby current0.0005 A
Maximum slew rate0.11 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
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