MV1401 datasheet, PDF - EEWORLD Datasheet

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MV1401: DescriptionVariable Capacitance Diode, 550pF C(T), 12V, Silicon, Hyperabrupt, DO-204AB; CategoryDiscrete semiconductor diode; File Size47KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MV1401 Overview

Variable Capacitance Diode, 550pF C(T), 12V, Silicon, Hyperabrupt, DO-204AB

MV1401 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	12 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	15%
Minimum diode capacitance ratio	14
Nominal diode capacitance	550 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JEDEC-95 code	DO-204AB
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	200
Maximum reverse current	0.1 µA
Reverse test voltage	10 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Varactor Diode Classification	HYPERABRUPT

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Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Nominal diode capacitance	550 pF	6.8 pF	175 pF	8.2 pF	39 pF	29 pF	20 pF	36 pF	27 pF
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
minimum quality factor	200	300	200	300	200	280	250	100	200
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	-	O-LALF-W2	R-PDIP-T2	O-XALF-W2	-	O-LALF-W2
ECCN code	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	12 V	20 V	12 V	-	20 V	30 V	20 V	-	20 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED	-	ISOLATED	-	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	-	SINGLE
Minimum diode capacitance ratio	14	2	10	-	2	5	2	-	2
Diode component materials	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	-	SILICON
JEDEC-95 code	DO-204AB	DO-204AA	DO-204AA	-	DO-204AA	-	DO-204AA	-	DO-204AA
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	-	O-LALF-W2	R-PDIP-T2	O-XALF-W2	-	O-LALF-W2
Number of components	1	1	1	-	1	1	1	-	1
Number of terminals	2	2	2	-	2	2	2	-	2
Maximum operating temperature	175 °C	125 °C	175 °C	-	125 °C	-	-	-	125 °C
Package body material	GLASS	GLASS	GLASS	-	GLASS	PLASTIC/EPOXY	UNSPECIFIED	-	GLASS
Package shape	ROUND	ROUND	ROUND	-	ROUND	RECTANGULAR	ROUND	-	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	-	LONG FORM	IN-LINE	LONG FORM	-	LONG FORM
Maximum power dissipation	0.4 W	0.4 W	0.4 W	-	0.4 W	0.4 W	-	-	0.4 W
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Maximum reverse current	0.1 µA	0.1 µA	0.1 µA	-	0.1 µA	-	-	-	0.1 µA
Reverse test voltage	10 V	15 V	10 V	-	15 V	-	-	-	15 V
Terminal form	WIRE	WIRE	WIRE	-	WIRE	THROUGH-HOLE	WIRE	-	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	-	AXIAL	DUAL	AXIAL	-	AXIAL
Varactor Diode Classification	HYPERABRUPT	ABRUPT	HYPERABRUPT	-	ABRUPT	-	-	-	ABRUPT
Maximum repetitive peak reverse voltage	-	20 V	12 V	20 V	20 V	-	20 V	32 V	20 V

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