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MV1622

Description
Variable Capacitance Diode, 8.2pF C(T)
CategoryDiscrete semiconductor    diode   
File Size47KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MV1622 Overview

Variable Capacitance Diode, 8.2pF C(T)

MV1622 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
Reach Compliance Codeunknown
Nominal diode capacitance8.2 pF
Diode typeVARIABLE CAPACITANCE DIODE
JESD-609 codee0
minimum quality factor300
Maximum repetitive peak reverse voltage20 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

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Description Variable Capacitance Diode, 8.2pF C(T) Variable Capacitance Diode, Ultra High Frequency, 6.8pF C(T), 20V, Silicon, Abrupt, DO-204AA Variable Capacitance Diode, 175pF C(T), 12V, Silicon, Hyperabrupt, DO-204AA Variable Capacitance Diode, Ultra High Frequency, 39pF C(T), 20V, Silicon, Abrupt, DO-204AA Variable Capacitance Diode, 550pF C(T), 12V, Silicon, Hyperabrupt, DO-204AB Variable Capacitance Diode, Very High Frequency, 29pF C(T), 30V, Silicon, CASE 226, MINI-L, 2 PIN Variable Capacitance Diode, 20pF C(T), 20V, Silicon, DO-204AA, CASE 51, DO-7, 2 PIN Variable Capacitance Diode, 36pF C(T), Variable Capacitance Diode, Ultra High Frequency, 27pF C(T), 20V, Silicon, Abrupt, DO-204AA
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
Nominal diode capacitance 8.2 pF 6.8 pF 175 pF 39 pF 550 pF 29 pF 20 pF 36 pF 27 pF
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
minimum quality factor 300 300 200 200 200 280 250 100 200
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum repetitive peak reverse voltage 20 V 20 V 12 V 20 V - - 20 V 32 V 20 V
package instruction - O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 R-PDIP-T2 O-XALF-W2 - O-LALF-W2
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage - 20 V 12 V 20 V 12 V 30 V 20 V - 20 V
Shell connection - ISOLATED ISOLATED ISOLATED ISOLATED - ISOLATED - ISOLATED
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
Minimum diode capacitance ratio - 2 10 2 14 5 2 - 2
Diode component materials - SILICON SILICON SILICON SILICON SILICON SILICON - SILICON
JEDEC-95 code - DO-204AA DO-204AA DO-204AA DO-204AB - DO-204AA - DO-204AA
JESD-30 code - O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 R-PDIP-T2 O-XALF-W2 - O-LALF-W2
Number of components - 1 1 1 1 1 1 - 1
Number of terminals - 2 2 2 2 2 2 - 2
Maximum operating temperature - 125 °C 175 °C 125 °C 175 °C - - - 125 °C
Package body material - GLASS GLASS GLASS GLASS PLASTIC/EPOXY UNSPECIFIED - GLASS
Package shape - ROUND ROUND ROUND ROUND RECTANGULAR ROUND - ROUND
Package form - LONG FORM LONG FORM LONG FORM LONG FORM IN-LINE LONG FORM - LONG FORM
Maximum power dissipation - 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W - - 0.4 W
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
Maximum reverse current - 0.1 µA 0.1 µA 0.1 µA 0.1 µA - - - 0.1 µA
Reverse test voltage - 15 V 10 V 15 V 10 V - - - 15 V
Terminal form - WIRE WIRE WIRE WIRE THROUGH-HOLE WIRE - WIRE
Terminal location - AXIAL AXIAL AXIAL AXIAL DUAL AXIAL - AXIAL
Varactor Diode Classification - ABRUPT HYPERABRUPT ABRUPT HYPERABRUPT - - - ABRUPT

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