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GS816118D-225T

Description
Cache SRAM, 1MX18, 6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
Categorystorage    storage   
File Size941KB,36 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS816118D-225T Overview

Cache SRAM, 1MX18, 6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

GS816118D-225T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeBGA
package instructionBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codeunknown
ECCN code3A991.B.2.B
Maximum access time6 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
Maximum clock frequency (fCLK)225 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density18874368 bit
Memory IC TypeCACHE SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3 V
Certification statusNot Qualified
Maximum standby current0.02 A
Minimum standby current2.3 V
Maximum slew rate0.235 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
Base Number Matches1

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