Variable Capacitance Diode, Ultra High Frequency, 39pF C(T), 20V, Silicon, Abrupt, DO-204AA
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Motorola ( NXP ) |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Minimum breakdown voltage | 20 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Minimum diode capacitance ratio | 2 |
Nominal diode capacitance | 39 pF |
Diode component materials | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE |
frequency band | ULTRA HIGH FREQUENCY |
JEDEC-95 code | DO-204AA |
JESD-30 code | O-LALF-W2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 125 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.4 W |
Certification status | Not Qualified |
minimum quality factor | 200 |
Maximum repetitive peak reverse voltage | 20 V |
Maximum reverse current | 0.1 µA |
Reverse test voltage | 15 V |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | AXIAL |
Varactor Diode Classification | ABRUPT |
MV1640 | MV1620 | MV1403 | MV1622 | MV1401 | MV109 | MV1632 | MV104G | MV1636 | |
---|---|---|---|---|---|---|---|---|---|
Description | Variable Capacitance Diode, Ultra High Frequency, 39pF C(T), 20V, Silicon, Abrupt, DO-204AA | Variable Capacitance Diode, Ultra High Frequency, 6.8pF C(T), 20V, Silicon, Abrupt, DO-204AA | Variable Capacitance Diode, 175pF C(T), 12V, Silicon, Hyperabrupt, DO-204AA | Variable Capacitance Diode, 8.2pF C(T) | Variable Capacitance Diode, 550pF C(T), 12V, Silicon, Hyperabrupt, DO-204AB | Variable Capacitance Diode, Very High Frequency, 29pF C(T), 30V, Silicon, CASE 226, MINI-L, 2 PIN | Variable Capacitance Diode, 20pF C(T), 20V, Silicon, DO-204AA, CASE 51, DO-7, 2 PIN | Variable Capacitance Diode, 36pF C(T), | Variable Capacitance Diode, Ultra High Frequency, 27pF C(T), 20V, Silicon, Abrupt, DO-204AA |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
Nominal diode capacitance | 39 pF | 6.8 pF | 175 pF | 8.2 pF | 550 pF | 29 pF | 20 pF | 36 pF | 27 pF |
Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
minimum quality factor | 200 | 300 | 200 | 300 | 200 | 280 | 250 | 100 | 200 |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | - | O-LALF-W2 | R-PDIP-T2 | O-XALF-W2 | - | O-LALF-W2 |
ECCN code | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Minimum breakdown voltage | 20 V | 20 V | 12 V | - | 12 V | 30 V | 20 V | - | 20 V |
Shell connection | ISOLATED | ISOLATED | ISOLATED | - | ISOLATED | - | ISOLATED | - | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | - | SINGLE |
Minimum diode capacitance ratio | 2 | 2 | 10 | - | 14 | 5 | 2 | - | 2 |
Diode component materials | SILICON | SILICON | SILICON | - | SILICON | SILICON | SILICON | - | SILICON |
JEDEC-95 code | DO-204AA | DO-204AA | DO-204AA | - | DO-204AB | - | DO-204AA | - | DO-204AA |
JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | - | O-LALF-W2 | R-PDIP-T2 | O-XALF-W2 | - | O-LALF-W2 |
Number of components | 1 | 1 | 1 | - | 1 | 1 | 1 | - | 1 |
Number of terminals | 2 | 2 | 2 | - | 2 | 2 | 2 | - | 2 |
Maximum operating temperature | 125 °C | 125 °C | 175 °C | - | 175 °C | - | - | - | 125 °C |
Package body material | GLASS | GLASS | GLASS | - | GLASS | PLASTIC/EPOXY | UNSPECIFIED | - | GLASS |
Package shape | ROUND | ROUND | ROUND | - | ROUND | RECTANGULAR | ROUND | - | ROUND |
Package form | LONG FORM | LONG FORM | LONG FORM | - | LONG FORM | IN-LINE | LONG FORM | - | LONG FORM |
Maximum power dissipation | 0.4 W | 0.4 W | 0.4 W | - | 0.4 W | 0.4 W | - | - | 0.4 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
Maximum repetitive peak reverse voltage | 20 V | 20 V | 12 V | 20 V | - | - | 20 V | 32 V | 20 V |
Maximum reverse current | 0.1 µA | 0.1 µA | 0.1 µA | - | 0.1 µA | - | - | - | 0.1 µA |
Reverse test voltage | 15 V | 15 V | 10 V | - | 10 V | - | - | - | 15 V |
Terminal form | WIRE | WIRE | WIRE | - | WIRE | THROUGH-HOLE | WIRE | - | WIRE |
Terminal location | AXIAL | AXIAL | AXIAL | - | AXIAL | DUAL | AXIAL | - | AXIAL |
Varactor Diode Classification | ABRUPT | ABRUPT | HYPERABRUPT | - | HYPERABRUPT | - | - | - | ABRUPT |