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HY5DV651622TC-75

Description
DDR DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Categorystorage    storage   
File Size78KB,9 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
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HY5DV651622TC-75 Overview

DDR DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

HY5DV651622TC-75 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts66
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
JESD-30 codeR-PDSO-G66
JESD-609 codee6
length22.225 mm
memory density67108864 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals66
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
width10.16 mm
HY5DV651622
4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM
PRELIMINARY
DESCRIPTION
The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited
for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of
1,048,576x16.
HY5DV651622 offers fully synchronous operations referenced to both rising and falling edges of the clock. While all
addresses and control inputs are latched on the rising edges of the clock(falling edges of the CLK), Data(DQ), Data
strobes(LDQS/UDQS) and Write data masks(LDM/UDM) inputs are sampled on both rising and falling edges of it. The
data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage
levels are compatible with SSTL_2.
Mode Register Set options include the length of pipeline (CAS latency of 2.0 / 2.5 / 3.0), the number of consecutive
read or write cycles initiated by a single control command (Burst length of 2 / 4 / 8), and the burst count
sequence(sequential or interleave). Because data rate is doubled through reading and writing at both rising and falling
edges of the clock, 2X higher data bandwidth can be achieved than that of traditional (single data rate) Synchronous
DRAM.
FEATURES
3.3V for V
DD
and 2.5V for V
DDQ
power supplies
All inputs and outputs are compatible with SSTL_2
interface
JEDEC standard 400mil 66pin TSOP-II with 0.65mm
pin pitch
Fully differential clock operations(CLK & CLK)
All addresses and control inputs except Data, Data
strobes and Data masks latched on the rising edges
of the clock
Data(DQ), Data strobes(LDQS/UDQS) and Write
masks(LDM/UDM) latched on both rising and falling
edges of the clock
Data outputs on LDQS/UDQS edges when read
(edged DQ)
Write mask byte controls by LDM and UDM
Programmable CAS Latency 2.0 / 2.5 / 3.0
Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
Internal four bank operations with single pulsed RAS
Auto refresh and self refresh supported
4096 refresh cycles / 64ms
Data inputs on LDQS/UDQS centers when write
(centered DQ)
Data strobes synchronized with output data for read
and input data for write
Delay Locked Loop(DLL) installed with DLL reset
mode
ORDERING INFORMATION
Part No.
HY5DV651622TC-G6
HY5DV651622TC-G7
HY5DV651622TC-7
HY5DV651622TC-75
HY5DV651622TC-8
* JEDEC Defined Specifications compliant
Power Supply
Clock Frequency
166MHz
143MHz
Organization
Interface
Package
V
DD
=3.3V
V
DDQ
=2.5V
133MHz(*PC266A)
125MHz(*PC266B)
100MHz(*PC200)
4Banks x 1Mbit x16
SSTL_2
400mil 66pin
TSOP II
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.8/ Oct.99

HY5DV651622TC-75 Related Products

HY5DV651622TC-75 HY5DV651622TC-8 HY5DV651622TC-7
Description DDR DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 DDR DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 DDR DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Parts packaging code TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSOP2, TSOP2,
Contacts 66 66 66
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
JESD-30 code R-PDSO-G66 R-PDSO-G66 R-PDSO-G66
JESD-609 code e6 e6 e6
length 22.225 mm 22.225 mm 22.225 mm
memory density 67108864 bit 67108864 bit 67108864 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM
memory width 16 16 16
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 66 66 66
word count 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 4MX16 4MX16 4MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3.15 V 3.15 V 3.15 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface TIN BISMUTH TIN BISMUTH TIN BISMUTH
Terminal form GULL WING GULL WING GULL WING
Terminal pitch 0.65 mm 0.65 mm 0.65 mm
Terminal location DUAL DUAL DUAL
width 10.16 mm 10.16 mm 10.16 mm
Maker SK Hynix - SK Hynix
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