JANTXVR2N7488T3 datasheet, PDF

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JANTXVR2N7488T3: DescriptionPower Field-Effect Transistor, 18A I(D), 130V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size235KB，22 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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JANTXVR2N7488T3 Overview

Power Field-Effect Transistor, 18A I(D), 130V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

JANTXVR2N7488T3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	TO-257AA, 3 PIN
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	80 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	130 V
Maximum drain current (Abs) (ID)	18 A
Maximum drain current (ID)	18 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	S-XSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	72 A
Certification status	Qualified
Guideline	MIL-19500/705
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 24 September 2011.

INCH-POUND

MIL-PRF-19500/705C

24 June 2011

SUPERSEDING

MIL-PRF-19500/705B

21 January 2010

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

(TOTAL DOSE AND SINGLE EVENT EFFECTS)

TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3,

JANTXVR AND JANSR

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and

MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a N-Channel, enhancement-mode,

MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of product

assurance are provided for each device type as specified in

MIL-PRF-19500,

with avalanche energy maximum rating

) and maximum avalanche current (I

). See

6.5

for JANHC and JANKC die versions.

1.2 Physical dimensions. See

figure 1,

(TO-257AA).

1.3 Maximum ratings. T

= +25°C, unless otherwise specified.

Type

(1)

+25°C

θJC

(2)

(3)

(4)

=+25°C

A dc

9.6

(3)

(4)

+100°C

A dc

7.6

6.0

(5)

and

STG

2N7488T3

2N7489T3

2N7490T3

1.56

°C/W

1.67

V dc

130

200

250

V dc

130

200

250

V dc

±20

A dc

9.6

A (pk)

38.4

°C

-55

+150

(1) Derate linearly 0.6 W/°C for T

> +25°C.

(2) See

figure 2,

thermal impedance curves.

(3) The following formula derives the maximum theoretical I

specs. I

is limited to 18 A by package and device

construction.

- T

(

)

(

( on ) at T

)

(4) See

figure 3,

maximum drain current graphs.

(5) I

= 4 X I

; I

as calculated in note (3).

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dla.mil.

Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online database at

https://assist.daps.dla.mil/.

AMSC N/A

FSC 5961

JANTXVR2N7488T3 Related Products

	JANTXVR2N7488T3	JANSR2N7488T3
Description	Power Field-Effect Transistor, 18A I(D), 130V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN	Power Field-Effect Transistor, 18A I(D), 130V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
Is it Rohs certified?	incompatible	incompatible
Reach Compliance Code	unknown	compliant
ECCN code	EAR99	EAR99
Other features	RADIATION HARDENED	RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	80 mJ	80 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	130 V	130 V
Maximum drain current (Abs) (ID)	18 A	18 A
Maximum drain current (ID)	18 A	18 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA	TO-257AA
JESD-30 code	S-XSFM-P3	S-XSFM-P3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	75 W	75 W
Maximum pulsed drain current (IDM)	72 A	72 A
Certification status	Qualified	Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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