The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 24 September 2011.
INCH-POUND
MIL-PRF-19500/705C
24 June 2011
SUPERSEDING
MIL-PRF-19500/705B
21 January 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
(TOTAL DOSE AND SINGLE EVENT EFFECTS)
TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3,
JANTXVR AND JANSR
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a N-Channel, enhancement-mode,
MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of product
assurance are provided for each device type as specified in
MIL-PRF-19500,
with avalanche energy maximum rating
(E
AS
) and maximum avalanche current (I
AS
). See
6.5
for JANHC and JANKC die versions.
1.2 Physical dimensions. See
figure 1,
(TO-257AA).
1.3 Maximum ratings. T
A
= +25°C, unless otherwise specified.
Type
P
T
(1)
T
C
=
+25°C
P
T
T
A
=
+25°C
R
θJC
(2)
V
DS
V
DG
V
GS
I
D1
(3)
(4)
T
C
=+25°C
A dc
18
12
9.6
I
D2
(3)
(4)
T
C
=
+100°C
A dc
12
7.6
6.0
I
S
I
DM
(5)
T
J
and
T
STG
W
2N7488T3
2N7489T3
2N7490T3
75
75
75
W
1.56
1.56
1.56
°C/W
1.67
1.67
1.67
V dc
130
200
250
V dc
130
200
250
V dc
±20
±20
±20
A dc
18
12
9.6
A (pk)
72
48
38.4
°C
-55
to
+150
(1) Derate linearly 0.6 W/°C for T
C
> +25°C.
(2) See
figure 2,
thermal impedance curves.
(3) The following formula derives the maximum theoretical I
D
specs. I
D
is limited to 18 A by package and device
construction.
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
(4) See
figure 3,
maximum drain current graphs.
(5) I
DM
= 4 X I
D1
; I
D1
as calculated in note (3).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/705C
1.4 Primary electrical characteristics at T
C
= +25°C.
Type
Min V
(BR)DSS
V
GS
= 0
I
D
= 1.0 mA
dc
V
GS(TH)1
V
DS
≥
V
GS
I
D
= 1.0 mA
dc
Max I
DSS1
V
GS
= 0
V
DS
= 80
percent
of rated V
DS
Max r
DS(on)
(1)
V
GS
= 12V, I
D
= I
D2
E
AS
T
J
=
+25°C
V dc
V dc
Min
2.5
2.5
2.5
Max
4.5
4.5
4.5
µA
dc
10
10
10
Ω
0.090
0.230
0.410
T
J
=
+150°C
Ω
0.207
0.522
0.820
mJ
2N7488T3
2N7489T3
2N7490T3
130
200
250
80
60
59
(1) Pulsed (see
4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL–PRF–19500
-
Semiconductor Devices, General Specification for.
* DEPARTMENT OF DEFENSE STANDARDS
MIL–STD–750
-
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or
https://assist.daps.dla.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/705C
Ltr
Inches
Min
Max
.430
.033
.190
.025
.500
.120 BSC
.100 BSC
.140
.527
.645
.035
.410
Drain
Source
Gate
.150
.537
.665
.045
.420
.200
.035
.625
Millimeters
Min
10.41
Max
10.92
0.84
4.83
0.64
12.70
5.08
0.89
15.88
BL
BL
1
CH
LD
LL
.410
TO-257
LO
LS
MHD
MHO
TL
TT
TW
Term 1
Term 2
Term 3
3.05 BSC
2.54 BSC
3.56
13.39
16.38
0.89
10.41
3.81
13.64
16.89
1.14
10.67
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The lid shall be electrically isolated from the drain, gate and source.
4. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
5. This area is for the lead feed-thru eyelets (configuration is optional, but will not extend beyond this zone).
FIGURE 1. Physical dimensions for TO-257AA.
3
MIL-PRF-19500/705C
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in
MIL-PRF-19500
and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see
4.2
and
6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in
MIL-PRF-19500
and as follows.
I
AS
........ Rated avalanche current, nonrepetitive
nC ........ nano Coulomb.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500,
and on
figure 1
(TO-257AA). Methods used for electrical isolation of the terminals shall employ
materials that contain a minimum of 90 percent Al
2
O
3
(ceramic).
3.4.1 Lead formation and finish. Lead finish shall be solderable in accordance with MIL-STD-750,
MIL-PRF-19500
and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see
6.2).
When
lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with
screen 14 of
MIL-PRF-19500
and 100 percent dc testing in accordance with
table I,
subgroup 2 herein.
3.4.2 Internal construction. Multiple chip construction is not permitted to meet the requirements of this
specification.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge
protection.
3.5.1 Handling. Metal oxide semiconductor (MOS) devices must be handled with certain precautions to avoid
damage due to the accumulation of static charge. However, the following handling practices are recommended
(see 3.5).
a.
b.
c.
d.
e.
f.
g.
Devices should be handled on benches with conductive handling devices.
Ground test equipment, tools, and personnel handling devices.
Do not handle devices by the leads.
Store devices in conductive foam or carriers.
Avoid use of plastic, rubber, or silk in MOS areas.
Maintain relative humidity above 50 percent if practical.
Care should be exercised during test and troubleshooting to apply not more than maximum rated
voltage to any lead.
Gate must be terminated to source, R
≤
or 100 kΩ, whenever bias voltage is applied drain to source.
h.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in
1.3, 1.4,
and
table I.
3.7 Electrical test requirements. The electrical test requirements shall be as specified in
table I.
4
MIL-PRF-19500/705C
3.8 Marking. Marking shall be in accordance with
MIL-PRF-19500.
At the option of the manufacturer, marking of
the country of origin may be omitted from the body of the transistor but shall be retained on the initial container.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see
4.2).
b. Screening (see
4.3).
c. Conformance inspection (see
4.4
and
table I
and
II).
* 4.2 Qualification inspection. Qualification inspection shall be in accordance with
MIL-PRF-19500
and as specified
herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III
tests, the tests specified in
table III
herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.1.1 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die
design or process change is introduced. See the design safe operation area figures herein.
5
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