OM6021SCV datasheet, PDF - EEWORLD Datasheet

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OM6021SCV: DescriptionPower Field-Effect Transistor, 35A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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OM6021SCV Overview

Power Field-Effect Transistor, 35A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN

OM6021SCV Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-259AA
package instruction	FLANGE MOUNT, R-MSFM-P3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	35 A
Maximum drain-source on-resistance	0.065 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-259AA
JESD-30 code	R-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	160 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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OM6021SC OM6023SC

OM6022SC OM6024SC

POWER MOSFETS IN HERMETIC PACKAGE

100V Thru 500V, Up To 35 Amp, N-Channel

Power MOSFETs In JEDEC TO-259AA Package

FEATURES

•

Isolated Side-Tab Hermetic Metal Package

Fast Switching, Low Drive Current

Ease of Paralleling For Added Power

Low R

DS(on)

• Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits.

MAXIMUM RATINGS

PART NUMBER

OM6021SC

OM6022SC

OM6023SC

OM6024SC

100V

200V

400V

500V

DS(ON)

.065W

.095W

.3W

.4W

35A

30A

15A

13A

3.1

SCHEMATIC

PIN CONNECTION

1 Drain

2 Source

3 Gate

4 11 R2

Supersedes 1 08 R1

3.1 - 89

OM6021SCV Related Products

	OM6021SCV	OM6022SCV	OM6023SCV	OM6024SCV
Description	Power Field-Effect Transistor, 35A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN	Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN	Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN	Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-259AA	TO-259AA	TO-259AA	TO-259AA
package instruction	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	200 V	400 V	500 V
Maximum drain current (ID)	35 A	30 A	15 A	13 A
Maximum drain-source on-resistance	0.065 Ω	0.095 Ω	0.3 Ω	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-259AA	TO-259AA	TO-259AA	TO-259AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	235	NOT SPECIFIED	235
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	160 A	120 A	60 A	52 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	30	NOT SPECIFIED	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maker	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）

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