S-93C86BD4H-T8T1G datasheet, PDF

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S-93C86BD4H-T8T1G: Description1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8; Categorystorage; File Size397KB，34 Pages; ManufacturerSII; Websitehttp://www.sii.co.jp/

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S-93C86BD4H-T8T1G Overview

1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8

S-93C86BD4H-T8T1G Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	8
Maximum operating temperature	105 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	5.5 V
Minimum supply/operating voltage	1.8 V
Rated supply voltage	5 V
maximum clock frequency	2 MHz
Processing package description	LEAD FREE, SOP-8
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
Craftsmanship	CMOS
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	1.27 mm
terminal coating	TIN BISMUTH/TIN SILVER
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
Temperature level	INDUSTRIAL
memory width	16
organize	1K X 16
storage density	16384 deg
operating mode	SYNCHRONOUS
Number of digits	1024 words
Number of digits	1K
Memory IC type	MICROWIRE BUS SERIAL EEPROM
serial parallel	SERIAL
Maximum TWC of write cycle	4 ms

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Rev.2.2

_00

CMOS SERIAL E

PROM

S-93C86B

The S-93C86B is a high speed, low current

consumption, 16 K-bit serial E

PROM with a wide

operating voltage range. It is organized as 1024-word

16-bit, respectively. This product is capable of

sequential read, at which time addresses are

automatically incremented in 16-bit blocks. The

instruction code is compatible with the NM93CS86.

Features

•

Low current consumption

Standby:

1.5

µA

Max. (V

5.5 V, at

−40

+85°C)

Operating: 0.8 mA Max. (V

5.5 V)

0.4 mA Max. (V

2.5 V)

Read:

1.8 to 5.5 V (at

−40

+85°C)

Write:

2.7 to 5.5 V (at

−40

+85°C)

•

Wide operating voltage range

•

Sequential read capable

•

Write disable function when power supply voltage is low

•

Function to protect against write due to erroneous instruction recognition

•

Endurance:

cycles/word

(at

+25°C)

write capable,

cycles/word

(at

+85°C)

cycles/word

(at

+105°C)

*1.

For each address (Word: 16 bits)

•

Data retention:

10 years (after rewriting 10

cycles/word at

+85°C)

•

S-93C86B:

16 K-bit NM93CS86 instruction code compatible

•

High-temperature operation:

+105°C

Max. supported

(Only S-93C86BD4H-J8T2G and S-93C86BD4H-T8T2G)

•

Write time:

4.0 ms Max.

•

Lead-free products

Packages

Package name

8-Pin SOP(JEDEC)

8-Pin TSSOP

Package

FJ008-A

FT008-A

Drawing code

Tape

FJ008-D

FT008-E

Reel

FJ008-D

FT008-E

Caution This product is intended to use in general electronic devices such as consumer electronics,

office equipment, and communications devices. Before using the product in medical

equipment or automobile equipment including car audio, keyless entry and engine control

unit, contact to SII is indispensable.

Seiko Instruments Inc.

S-93C86BD4H-T8T1G Related Products

	S-93C86BD4H-T8T1G	S-93C86B	S-93C86BD4H-J8T1G	S-93C86BD4I-J8T1G	S-93C86BD4I-J8T2G	S-93C86BD4H-T8T2G	S-93C86BD4I-T8T2G	S-93C86BD4I-T8T1G	S-93C86BD4H-J8T2G
Description	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	8	8	8	8	8	8	8	8	8
Maximum operating temperature	105 Cel	105 Cel	105 Cel	105 Cel	105 Cel	105 Cel	105 Cel	105 Cel	105 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel
Maximum supply/operating voltage	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply/operating voltage	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Rated supply voltage	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
maximum clock frequency	2 MHz	2 MHz	2 MHz	2 MHz	2 MHz	2 MHz	2 MHz	2 MHz	2 MHz
Processing package description	LEAD FREE, SOP-8	LEAD FREE, SOP-8	LEAD FREE, SOP-8	LEAD FREE, SOP-8	LEAD FREE, SOP-8	LEAD FREE, SOP-8	LEAD FREE, SOP-8	LEAD FREE, SOP-8	LEAD FREE, SOP-8
Lead-free	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
Craftsmanship	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal spacing	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
terminal coating	TIN BISMUTH/TIN SILVER	TIN BISMUTH/TIN SILVER	TIN BISMUTH/TIN SILVER	TIN BISMUTH/TIN SILVER	TIN BISMUTH/TIN SILVER	TIN BISMUTH/TIN SILVER	TIN BISMUTH/TIN SILVER	TIN BISMUTH/TIN SILVER	TIN BISMUTH/TIN SILVER
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
memory width	16	16	16	16	16	16	16	16	16
organize	1K X 16	1K X 16	1K X 16	1K X 16	1K X 16	1K X 16	1K X 16	1K X 16	1K X 16
storage density	16384 deg	16384 deg	16384 deg	16384 deg	16384 deg	16384 deg	16384 deg	16384 deg	16384 deg
operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Memory IC type	MICROWIRE BUS SERIAL EEPROM	MICROWIRE BUS SERIAL EEPROM	MICROWIRE BUS SERIAL EEPROM	MICROWIRE BUS SERIAL EEPROM	MICROWIRE BUS SERIAL EEPROM	MICROWIRE BUS SERIAL EEPROM	MICROWIRE BUS SERIAL EEPROM	MICROWIRE BUS SERIAL EEPROM	MICROWIRE BUS SERIAL EEPROM
serial parallel	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
Maximum TWC of write cycle	4 ms	4 ms	4 ms	4 ms	4 ms	4 ms	4 ms	4 ms	4 ms
Number of digits	1K	1K	1K	1K	1K	1K	1K	1K	1K

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