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S-93C86B

Description
1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
Categorystorage   
File Size397KB，34 Pages
ManufacturerSII
Websitehttp://www.sii.co.jp/
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S-93C86B Overview

1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8

S-93C86B Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature105 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage1.8 V
Rated supply voltage5 V
maximum clock frequency2 MHz
Processing package descriptionLEAD FREE, SOP-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingTIN BISMUTH/TIN SILVER
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width16
organize1K X 16
storage density16384 deg
operating modeSYNCHRONOUS
Number of digits1024 words
Number of digits1K
Memory IC typeMICROWIRE BUS SERIAL EEPROM
serial parallelSERIAL
Maximum TWC of write cycle4 ms

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Download Datasheet
Rev.2.2
_00
CMOS SERIAL E
2
PROM
S-93C86B
The S-93C86B is a high speed, low current
consumption, 16 K-bit serial E
2
PROM with a wide
operating voltage range. It is organized as 1024-word
×
16-bit, respectively. This product is capable of
sequential read, at which time addresses are
automatically incremented in 16-bit blocks. The
instruction code is compatible with the NM93CS86.
Features
•
Low current consumption
Standby:
1.5
µA
Max. (V
CC
=
5.5 V, at
−40
to
+85°C)
Operating: 0.8 mA Max. (V
CC
=
5.5 V)
0.4 mA Max. (V
CC
=
2.5 V)
Read:
1.8 to 5.5 V (at
−40
to
+85°C)
Write:
2.7 to 5.5 V (at
−40
to
+85°C)
•
Wide operating voltage range
•
Sequential read capable
•
Write disable function when power supply voltage is low
•
Function to protect against write due to erroneous instruction recognition
•
Endurance:
10
7
cycles/word
*1
(at
+25°C)
write capable,
10
6
cycles/word
*1
(at
+85°C)
3
×
10
5
cycles/word
*1
(at
+105°C)
*1.
For each address (Word: 16 bits)
•
Data retention:
10 years (after rewriting 10
6
cycles/word at
+85°C)
•
S-93C86B:
16 K-bit NM93CS86 instruction code compatible
•
High-temperature operation:
+105°C
Max. supported
(Only S-93C86BD4H-J8T2G and S-93C86BD4H-T8T2G)
•
Write time:
4.0 ms Max.
•
Lead-free products
Packages
Package name
8-Pin SOP(JEDEC)
8-Pin TSSOP
Package
FJ008-A
FT008-A
Drawing code
Tape
FJ008-D
FT008-E
Reel
FJ008-D
FT008-E
Caution This product is intended to use in general electronic devices such as consumer electronics,
office equipment, and communications devices. Before using the product in medical
equipment or automobile equipment including car audio, keyless entry and engine control
unit, contact to SII is indispensable.
Seiko Instruments Inc.
1

S-93C86B Related Products

S-93C86B S-93C86BD4H-J8T1G S-93C86BD4I-J8T1G S-93C86BD4I-J8T2G S-93C86BD4H-T8T2G S-93C86BD4I-T8T2G S-93C86BD4I-T8T1G S-93C86BD4H-J8T2G S-93C86BD4H-T8T1G
Description 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
Number of functions 1 1 1 1 1 1 1 1 1
Number of terminals 8 8 8 8 8 8 8 8 8
Maximum operating temperature 105 Cel 105 Cel 105 Cel 105 Cel 105 Cel 105 Cel 105 Cel 105 Cel 105 Cel
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel
Maximum supply/operating voltage 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply/operating voltage 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
Rated supply voltage 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
maximum clock frequency 2 MHz 2 MHz 2 MHz 2 MHz 2 MHz 2 MHz 2 MHz 2 MHz 2 MHz
Processing package description LEAD FREE, SOP-8 LEAD FREE, SOP-8 LEAD FREE, SOP-8 LEAD FREE, SOP-8 LEAD FREE, SOP-8 LEAD FREE, SOP-8 LEAD FREE, SOP-8 LEAD FREE, SOP-8 LEAD FREE, SOP-8
Lead-free Yes Yes Yes Yes Yes Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes Yes Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
Craftsmanship CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes Yes Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal spacing 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
terminal coating TIN BISMUTH/TIN SILVER TIN BISMUTH/TIN SILVER TIN BISMUTH/TIN SILVER TIN BISMUTH/TIN SILVER TIN BISMUTH/TIN SILVER TIN BISMUTH/TIN SILVER TIN BISMUTH/TIN SILVER TIN BISMUTH/TIN SILVER TIN BISMUTH/TIN SILVER
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
memory width 16 16 16 16 16 16 16 16 16
organize 1K X 16 1K X 16 1K X 16 1K X 16 1K X 16 1K X 16 1K X 16 1K X 16 1K X 16
storage density 16384 deg 16384 deg 16384 deg 16384 deg 16384 deg 16384 deg 16384 deg 16384 deg 16384 deg
operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Memory IC type MICROWIRE BUS SERIAL EEPROM MICROWIRE BUS SERIAL EEPROM MICROWIRE BUS SERIAL EEPROM MICROWIRE BUS SERIAL EEPROM MICROWIRE BUS SERIAL EEPROM MICROWIRE BUS SERIAL EEPROM MICROWIRE BUS SERIAL EEPROM MICROWIRE BUS SERIAL EEPROM MICROWIRE BUS SERIAL EEPROM
serial parallel SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL
Maximum TWC of write cycle 4 ms 4 ms 4 ms 4 ms 4 ms 4 ms 4 ms 4 ms 4 ms
Number of digits 1K 1K 1K 1K 1K 1K 1K 1K 1K

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