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K6R4016V1D-EP080

Description
Standard SRAM, 256KX16, 8ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48
Categorystorage    storage   
File Size225KB,12 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K6R4016V1D-EP080 Overview

Standard SRAM, 256KX16, 8ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48

K6R4016V1D-EP080 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionVFBGA, BGA48,6X8,30
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time8 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
length9 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals48
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum standby current0.0014 A
Minimum standby current2 V
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width7 mm
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