TY...S150A6.. Series
Vishay General Semiconductor
Trench MOS Barrier Schottky Bare Die
TMBS
®
a
c
e
FEATURES
• Trench MOS Schottky technology
• V
BRM
= 150 V
• Low forward voltage drop
• High frequency operation
d b
C
(2)
A
(1)
CIRCUIT DIAGRAM
C
(2)
A
(1)
Notes
(1)
Front metallization side: Anode
(2)
Back metallization side: Cathode
MECHANICAL DATA
DIMENSIONS in inches (millimeters)
DEVICE
(1)
TYPICAL TOTAL METAL THICKNESS
FRONT SIDE A
METAL
Ti/Al
Ti/Al
Ti/Al
Ti/Al
THICKNESS
5.4 μm
5.4 μm
5.4 μm
5.4 μm
BACK SIDE C
METAL
Ti/Ni/Ag
Ti/Ni/Ag
Ti/Ni/Ag
Ti/Ni/Ag
THICKNESS
3.3 μm
3.3 μm
3.3 μm
3.3 μm
ASSEMBLY
CHIP SIZE
a, b
MIN.
MAX.
0.056
(1.422)
0.080
(2.032)
0.093
(2.362)
0.102
(2.591)
BONDABLE/
SOLDERABLE
c, d
MIN.
0.049
(1.245)
0.073
(1.854)
0.086
(2.184)
0.095
(2.413)
MAX.
0.051
(1.295)
0.075
(1.905)
0.088
(2.235)
0.097
(2.464)
CHIP
THICKNESS
e
MIN.
0.010
(0.254)
0.010
(0.254)
0.010
(0.254)
0.010
(0.254)
MAX.
0.012
(0.305)
0.012
(0.305)
0.012
(0.305)
0.012
(0.305)
TY056S150A6OT
TY080S150A6OU
TY093S150A6OU
TY102S150A6OU
Bondable
Bondable
Bondable
Bondable
0.054
(1.372)
0.078
(1.981)
0.091
(2.311)
0.100
(2.540)
Note
(1)
Refer to Device Code definition
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BARE DIE
MINIMUM
BREAKDOWN
VOLTAGE
V
BRM (2)
(V)
AT I
R
= 1 mA
150
150
150
150
MAXIMUM
REVERSE
CURRENT
I
RM
AT V
BRM (2)
(μA)
100
150
200
250
FINISH GOOD (for reference not guarantee for bare die)
MAXIMUM
FORWARD DROP
VOLTAGE
(1)
V
F
AT I
F
(V)
1.41
1.20
1.36
1.43
(A)
5.0
10
15
20
OPERATING
JUNCTION
TEMPERATURE
RANGE
- 55 °C to + 150 °C
- 55 °C to + 150 °C
- 55 °C to + 150 °C
- 55 °C to + 150 °C
DEVICE
EQUIVALENT
PRODUCT
(3)
PACKAGE
STYLE
TY056S150A6OT
TY080S150A6OU
TY093S150A6OU
TY102S150A6OU
V10150C
V20150C
V30150C
VB40150C
TO-220AB
TO-220AB
TO-263AB
TO-263AB
Notes
(1)
Pulse test: 300 μs pulse width
(2)
Pulse test: Pulse width
40 ms
(3)
Package equivalent product quality level information will provide per customer request but only for reference no guarantee bare die can meet
the same
Document Number: 89218
Revision: 20-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TY...S150A6.. Series
Vishay General Semiconductor
PACKAGING
DEVICE
TY056S150A6OT
TY080S150A6OU
TY093S150A6OU
TY102S150A6OU
PACKAGE CODE
T
U
U
U
DELIVERY MODE
12 mm tape/4 mm pitch, 7" diameter plastic tape and reel
12 mm tape/4 mm pitch, 7" diameter plastic tape and reel
12 mm tape/4 mm pitch, 7" diameter plastic tape and reel
12 mm tape/4 mm pitch, 7" diameter plastic tape and reel
BASE QUANTITY
6000
6000
6000
6000
DEVICE CODE
TY
1
1
2
3
4
5
6
7
8
056
2
S
3
150
4
A
5
6
6
O
7
T
8
-
-
-
-
-
-
-
-
Planar Schottky Die
Die dimensions in mils
Process (for Schottky)
Voltage code: Code = V
BRM
Wafer diameter in inches
Quality level code
Packaging (see Packaging table)
P = Packaged die, high reliability grade
(1)
O = Packaged die, commercial grade
(1)
N = Non packaged die
(2)
R = T
J
max. 125 °C
S = T
J
max. 150 °C
H = T
J
max. 175 °C
A = Bondable
S = Solderable
6 = 6" wafer
Chip surface metallization (see Mechanical Data table)
Notes
(1)
Packaged die
• Existing die in qualified package
(2)
Non packaged die
• Existing fab. process
• Non standard die metal
• Die metal has been qualified
• No production in packaged form
www.vishay.com
2
For technical questions within your region, please contact one of the following:
Document Number: 89218
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000