EN29LV800AT-55RBCP datasheet, PDF

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EN29LV800AT-55RBCP: DescriptionFlash, 512KX16, 55ns, PBGA48, FBGA-48; Categorystorage storage; File Size753KB，41 Pages; ManufacturerESMT; Websitehttp://www.esmt.com.tw/; Environmental Compliance; Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.

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EN29LV800AT-55RBCP Overview

Flash, 512KX16, 55ns, PBGA48, FBGA-48

EN29LV800AT-55RBCP Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ESMT
package instruction	FBGA-48
Reach Compliance Code	unknown
Maximum access time	55 ns
Spare memory width	8
startup block	TOP
command user interface	YES
Data polling	YES
Durability	1000000 Write/Erase Cycles
JESD-30 code	R-PBGA-B48
length	8 mm
memory density	8388608 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	1,2,1,15
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA48,6X8,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.1 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
switch bit	YES
type	NOR TYPE
width	6 mm
Base Number Matches	1

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EN29LV800A

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

•

Single power supply operation

- Full voltage range: 2.7-3.6 volt read and write

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors.

•

Manufactured on 0.18 µm triple-metal double

poly triple-well CMOS Flash Technology

•

High performance

- Access times as fast as 55 ns

•

Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1

µA

typical standby current (standard access

time to active mode)

•

Flexible Sector Architecture:

- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,

and fifteen 64-Kbyte sectors (byte mode)

- One 8-Kword, two 4-Kword, one 16-Kword

and fifteen 32-Kword sectors (word mode)

•

Sector protection:

- Hardware locking of sectors to prevent

program or erase operations within individual

sectors

Additionally, temporary Sector Unprotect

allows code changes in previously locked

sectors.

•

High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

•

JEDEC Standard Embedded Erase and

Program Algorithms

•

JEDEC standard DATA# polling and toggle

bits feature

•

Single Sector and Chip Erase

•

Sector Unprotect Mode

•

Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

•

Low Vcc write inhibit < 2.5V

•

Minimum 1,000K endurance cycle

•

Package Options

- 48-pin TSOP (Type 1)

- 48-ball 6mm x 8mm FBGA

•

Commercial and industrial temperature

Range

GENERAL DESCRIPTION

The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs.

The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 55ns

to eliminate the need for WAIT statements in high-performance microprocessor systems.

The EN29LV800A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single

Sector or full chip erase operation, where each sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain

a minimum of 1,000K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2005/01/10

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