KSB1116YTA datasheet, PDF - EEWORLD Datasheet

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KSB1116YTA: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size50KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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KSB1116YTA Overview

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

KSB1116YTA Parametric

Parameter Name	Attribute value
Brand Name	Fairchild Semiconductor
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Manufacturer packaging code	3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	135
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.75 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
Base Number Matches	1

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KSB1116/1116A

Audio Frequency Power Amplifier & Medium

Speed Switching

• Complement to KSD1616/1616A

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

* Collector Current (Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature

Parameter

: KSB1116

: KSB1116A

: KSB1116

: KSB1116A

Ratings

-60

-80

-50

-60

-6

-1

-2

0.75

150

-55 ~ 150

Units

°C

* PW≤10ms, Duty Cycle≤50%

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CBO

EBO

FE1

FE2

(on)

(sat)

STG

* Base-Emitter On Voltage

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Turn On Time

Storage Time

Fall Time

Parameter

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

: KSB1116

: KSB1116A

Test Condition

= -60V, I

= -6V, I

= 0

= -2V, I

= -100mA

= -2V, I

= -1A

= -2V, I

= -50mA

= -1A, I

= -50mA

= -1A, I

= -50mA

= -10V, I

=0, f=1MHz

= -2V, I

= -100mA

= -10V, I

= -100mA

= -I

= -10mA

(off)= 2~3V

135

-600

-650

-0.2

-0.9

120

0.07

0.7

0.07

Min.

Typ.

Max.

-100

600

400

-700

-0.3

-1.2

MHz

µs

Units

* Pulse Test: PW

≤350µs,

Duty Cycle≤2%

Classification

FE1

135 ~ 270

200 ~ 400

300 ~ 600

Rev. A2, January 2002

KSB1116YTA Related Products

	KSB1116YTA	KSB1116LBU	KSB1116AGBU	KSB1116AYBU	KSB1116GBU
Description	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compliant	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	50 V	50 V	60 V	60 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	135	300	200	135	200
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.75 W	0.75 W	0.75 W	0.75 W	0.75 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz
Base Number Matches	1	1	1	-	-
Maker	-	Fairchild	-	Fairchild	Fairchild

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