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KSB1116AYBU

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
CategoryDiscrete semiconductor    The transistor   
File Size50KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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KSB1116AYBU Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

KSB1116AYBU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)135
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
KSB1116/1116A
KSB1116/1116A
Audio Frequency Power Amplifier & Medium
Speed Switching
• Complement to KSD1616/1616A
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: KSB1116
: KSB1116A
: KSB1116
: KSB1116A
Ratings
-60
-80
-50
-60
-6
-1
-2
0.75
150
-55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
* Base-Emitter On Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: KSB1116
: KSB1116A
Test Condition
V
CB
= -60V, I
E
=0
V
EB
= -6V, I
C
= 0
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -50mA
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -2V, I
C
= -100mA
V
CC
= -10V, I
C
= -100mA
I
B1
= -I
B2
= -10mA
V
BE
(off)= 2~3V
70
135
135
81
-600
-650
-0.2
-0.9
25
120
0.07
0.7
0.07
Min.
Typ.
Max.
-100
-100
600
400
-700
-0.3
-1.2
mV
V
V
pF
MHz
µs
µs
µs
Units
nA
nA
* Pulse Test: PW
≤350µs,
Duty Cycle≤2%
h
FE
Classification
Classification
h
FE1
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, January 2002

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Description Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 60 V 50 V 60 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 135 300 200 135 200
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e3 e3 e3 e3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.75 W 0.75 W 0.75 W 0.75 W 0.75 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz
Maker Fairchild Fairchild - - Fairchild
Base Number Matches - 1 1 1 -

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