Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, TO-252, MP-3ZK, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | NEC Electronics |
package instruction | ROHS COMPLIANT, TO-252, MP-3ZK, 3 PIN |
Reach Compliance Code | compliant |
Avalanche Energy Efficiency Rating (Eas) | 108 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 55 V |
Maximum drain current (ID) | 36 A |
Maximum drain-source on-resistance | 0.018 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-252AA |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 144 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | MATTE TIN |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
NP36N055SLE-E1-AY | NP36N055ILE | NP36N055HLE | NP36N055SLE | |
---|---|---|---|---|
Description | Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, TO-252, MP-3ZK, 3 PIN | Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3Z, 3 PIN | Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, MP-3, 3 PIN | Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3ZK, 3 PIN |
Maker | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics |
package instruction | ROHS COMPLIANT, TO-252, MP-3ZK, 3 PIN | TO-252, MP-3Z, 3 PIN | TO-251, MP-3, 3 PIN | TO-252, MP-3ZK, 3 PIN |
Reach Compliance Code | compliant | unknown | compliant | compliant |
Avalanche Energy Efficiency Rating (Eas) | 108 mJ | 108 mJ | 108 mJ | 108 mJ |
Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 55 V | 55 V | 55 V | 55 V |
Maximum drain current (ID) | 36 A | 36 A | 36 A | 36 A |
Maximum drain-source on-resistance | 0.018 Ω | 0.018 Ω | 0.018 Ω | 0.018 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-252AA | TO-252AA | TO-251AA | TO-252AA |
JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 3 | 2 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 144 A | 144 A | 144 A | 144 A |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | NO | YES |
Terminal form | GULL WING | GULL WING | THROUGH-HOLE | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Is it Rohs certified? | conform to | - | incompatible | incompatible |
JESD-609 code | e3 | - | e0 | e0 |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
Terminal surface | MATTE TIN | - | TIN LEAD | TIN LEAD |
Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |