NP36N055ILE datasheet, PDF - EEWORLD Datasheet

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NP36N055ILE: DescriptionPower Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3Z, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size171KB，7 Pages; ManufacturerNEC Electronics

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NP36N055ILE Overview

Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3Z, 3 PIN

NP36N055ILE Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	TO-252, MP-3Z, 3 PIN
Reach Compliance Code	unknown
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	108 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	36 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	144 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

NP36N055ILE Related Products

	NP36N055ILE	NP36N055SLE-E1-AY	NP36N055HLE	NP36N055SLE
Description	Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3Z, 3 PIN	Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, TO-252, MP-3ZK, 3 PIN	Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, MP-3, 3 PIN	Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3ZK, 3 PIN
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	TO-252, MP-3Z, 3 PIN	ROHS COMPLIANT, TO-252, MP-3ZK, 3 PIN	TO-251, MP-3, 3 PIN	TO-252, MP-3ZK, 3 PIN
Reach Compliance Code	unknown	compliant	compliant	compliant
Avalanche Energy Efficiency Rating (Eas)	108 mJ	108 mJ	108 mJ	108 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V	55 V	55 V
Maximum drain current (ID)	36 A	36 A	36 A	36 A
Maximum drain-source on-resistance	0.018 Ω	0.018 Ω	0.018 Ω	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-251AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	2	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	144 A	144 A	144 A	144 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	YES
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	-	conform to	incompatible	incompatible
JESD-609 code	-	e3	e0	e0
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal surface	-	MATTE TIN	TIN LEAD	TIN LEAD
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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