RU4(Z) datasheet, PDF - EEWORLD Datasheet

RU4(Z): DescriptionRectifier Diode, 1 Element, 3A, 400V V(RRM),; CategoryDiscrete semiconductor diode; File Size88KB，2 Pages; ManufacturerGalaxy Microelectronics; Environmental Compliance

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RU4(Z) Overview

Rectifier Diode, 1 Element, 3A, 400V V(RRM),

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Microelectronics
Reach Compliance Code	unknown
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
Maximum non-repetitive peak forward current	50 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	3 A
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.1 µs
surface mount	NO
Base Number Matches	1

	RU4(Z)	RU4Y(Z)	RU4C(Z)	RU4Z(Z)	RU4B(Z)
Description	Rectifier Diode, 1 Element, 3A, 400V V(RRM),	Rectifier Diode, 1 Element, 3.5A, 100V V(RRM),	Rectifier Diode, 1 Element, 2.5A, 1000V V(RRM),	Rectifier Diode, 1 Element, 3.5A, 200V V(RRM),	Rectifier Diode, 1 Element, 3A, 800V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V	1.3 V	1.6 V	1.3 V	1.6 V
Maximum non-repetitive peak forward current	50 A	70 A	50 A	70 A	50 A
Number of components	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	3 A	3.5 A	2.5 A	3.5 A	3 A
Maximum repetitive peak reverse voltage	400 V	100 V	1000 V	200 V	800 V
Maximum reverse recovery time	0.1 µs	0.1 µs	0.1 µs	0.1 µs	0.1 µs
surface mount	NO	NO	NO	NO	NO
Maker	Galaxy Microelectronics	-	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics
Base Number Matches	1	1	1	1	-

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