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RU4Y(Z)

Description
Rectifier Diode, 1 Element, 3.5A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size88KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
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RU4Y(Z) Overview

Rectifier Diode, 1 Element, 3.5A, 100V V(RRM),

RU4Y(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current70 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3.5 A
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.1 µs
surface mountNO
Base Number Matches1

RU4Y(Z) Related Products

RU4Y(Z) RU4C(Z) RU4Z(Z) RU4(Z) RU4B(Z)
Description Rectifier Diode, 1 Element, 3.5A, 100V V(RRM), Rectifier Diode, 1 Element, 2.5A, 1000V V(RRM), Rectifier Diode, 1 Element, 3.5A, 200V V(RRM), Rectifier Diode, 1 Element, 3A, 400V V(RRM), Rectifier Diode, 1 Element, 3A, 800V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.6 V 1.3 V 1.5 V 1.6 V
Maximum non-repetitive peak forward current 70 A 50 A 70 A 50 A 50 A
Number of components 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 3.5 A 2.5 A 3.5 A 3 A 3 A
Maximum repetitive peak reverse voltage 100 V 1000 V 200 V 400 V 800 V
Maximum reverse recovery time 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs
surface mount NO NO NO NO NO
Base Number Matches 1 1 1 1 -
Maker - Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics

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