Rectifier Diode, 1 Element, 2.5A, 1000V V(RRM),
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Galaxy Microelectronics |
Reach Compliance Code | unknown |
Configuration | SINGLE |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.6 V |
Maximum non-repetitive peak forward current | 50 A |
Number of components | 1 |
Maximum operating temperature | 150 °C |
Maximum output current | 2.5 A |
Maximum repetitive peak reverse voltage | 1000 V |
Maximum reverse recovery time | 0.1 µs |
surface mount | NO |
Base Number Matches | 1 |
RU4C(Z) | RU4Y(Z) | RU4Z(Z) | RU4(Z) | RU4B(Z) | |
---|---|---|---|---|---|
Description | Rectifier Diode, 1 Element, 2.5A, 1000V V(RRM), | Rectifier Diode, 1 Element, 3.5A, 100V V(RRM), | Rectifier Diode, 1 Element, 3.5A, 200V V(RRM), | Rectifier Diode, 1 Element, 3A, 400V V(RRM), | Rectifier Diode, 1 Element, 3A, 800V V(RRM), |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.6 V | 1.3 V | 1.3 V | 1.5 V | 1.6 V |
Maximum non-repetitive peak forward current | 50 A | 70 A | 70 A | 50 A | 50 A |
Number of components | 1 | 1 | 1 | 1 | 1 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Maximum output current | 2.5 A | 3.5 A | 3.5 A | 3 A | 3 A |
Maximum repetitive peak reverse voltage | 1000 V | 100 V | 200 V | 400 V | 800 V |
Maximum reverse recovery time | 0.1 µs | 0.1 µs | 0.1 µs | 0.1 µs | 0.1 µs |
surface mount | NO | NO | NO | NO | NO |
Maker | Galaxy Microelectronics | - | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics |
Base Number Matches | 1 | 1 | 1 | 1 | - |