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RU4C(Z)

Description
Rectifier Diode, 1 Element, 2.5A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size88KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
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RU4C(Z) Overview

Rectifier Diode, 1 Element, 2.5A, 1000V V(RRM),

RU4C(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
Maximum non-repetitive peak forward current50 A
Number of components1
Maximum operating temperature150 °C
Maximum output current2.5 A
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.1 µs
surface mountNO
Base Number Matches1

RU4C(Z) Related Products

RU4C(Z) RU4Y(Z) RU4Z(Z) RU4(Z) RU4B(Z)
Description Rectifier Diode, 1 Element, 2.5A, 1000V V(RRM), Rectifier Diode, 1 Element, 3.5A, 100V V(RRM), Rectifier Diode, 1 Element, 3.5A, 200V V(RRM), Rectifier Diode, 1 Element, 3A, 400V V(RRM), Rectifier Diode, 1 Element, 3A, 800V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.6 V 1.3 V 1.3 V 1.5 V 1.6 V
Maximum non-repetitive peak forward current 50 A 70 A 70 A 50 A 50 A
Number of components 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 2.5 A 3.5 A 3.5 A 3 A 3 A
Maximum repetitive peak reverse voltage 1000 V 100 V 200 V 400 V 800 V
Maximum reverse recovery time 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs
surface mount NO NO NO NO NO
Maker Galaxy Microelectronics - Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Base Number Matches 1 1 1 1 -

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