ZDT651TA datasheet, PDF - EEWORLD Datasheet

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ZDT651TA: DescriptionPower Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size50KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZDT651TA Overview

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

ZDT651TA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SM-8, 8 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	60 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	15
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	2.75 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	240 MHz
Base Number Matches	1

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SM-8 DUAL NPN MEDIUM POWER

TRANSISTORS

ISSUE 2 - AUGUST 1997

ZDT651

PARTMARKING DETAIL T651

SM-8

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

stg

VALUE

-55 to +150

UNIT

°C

THERMAL CHARACTERISTICS

PARAMETER

Total Power Dissipation at T

amb

= 25°C*

Any single die on

Both die on equally

Derate above 25°C*

Any single die on

Both die on equally

Thermal Resistance - Junction to Ambient*

Any single die on

Both die on equally

SYMBOL

tot

VALUE

2.25

2.75

55.6

45.5

UNIT

mW/ °C

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

ZDT651TA Related Products

	ZDT651TA	ZDT651TC
Description	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
package instruction	SM-8, 8 PIN	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	not_compliant	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	2 A	2 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	15	15
JESD-30 code	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	8	8
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power consumption environment	2.75 W	2.75 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	240 MHz	240 MHz

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