T501N60TOH datasheet, PDF - EEWORLD Datasheet

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T501N60TOH: DescriptionSilicon Controlled Rectifier, 1350A I(T)RMS, 640000mA I(T), 6000V V(DRM), 6000V V(RRM), 1 Element,; CategoryAnalog mixed-signal IC Trigger device; File Size146KB，9 Pages; ManufacturerEUPEC [eupec GmbH]

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T501N60TOH Overview

Silicon Controlled Rectifier, 1350A I(T)RMS, 640000mA I(T), 6000V V(DRM), 6000V V(RRM), 1 Element,

T501N60TOH Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Nominal circuit commutation break time	650 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	2000 V/us
Maximum DC gate trigger current	350 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	350 mA
JESD-30 code	O-CXDB-X4
Maximum leakage current	200 mA
On-state non-repetitive peak current	13500 A
Number of components	1
Number of terminals	4
Maximum on-state current	640000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	1350 A
Off-state repetitive peak voltage	6000 V
Repeated peak reverse voltage	6000 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Trigger device type	SCR
Base Number Matches	1

T501N60TOH Related Products

	T501N60TOH	T501N70TOH	T501N65TOH
Description	Silicon Controlled Rectifier, 1350A I(T)RMS, 640000mA I(T), 6000V V(DRM), 6000V V(RRM), 1 Element,	Silicon Controlled Rectifier, 1350A I(T)RMS, 640000mA I(T), 7000V V(DRM), 7000V V(RRM), 1 Element,	Silicon Controlled Rectifier, 1350A I(T)RMS, 640000mA I(T), 6500V V(DRM), 6500V V(RRM), 1 Element,
Reach Compliance Code	unknown	unknown	unknown
Nominal circuit commutation break time	650 µs	650 µs	650 µs
Configuration	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	2000 V/us	2000 V/us	2000 V/us
Maximum DC gate trigger current	350 mA	350 mA	350 mA
Maximum DC gate trigger voltage	2.5 V	2.5 V	2.5 V
Maximum holding current	350 mA	350 mA	350 mA
JESD-30 code	O-CXDB-X4	O-CXDB-X4	O-CXDB-X4
Maximum leakage current	200 mA	200 mA	200 mA
On-state non-repetitive peak current	13500 A	13500 A	13500 A
Number of components	1	1	1
Number of terminals	4	4	4
Maximum on-state current	640000 A	640000 A	640000 A
Maximum operating temperature	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	1350 A	1350 A	1350 A
Off-state repetitive peak voltage	6000 V	7000 V	6500 V
Repeated peak reverse voltage	6000 V	7000 V	6500 V
surface mount	YES	YES	YES
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Trigger device type	SCR	SCR	SCR
Base Number Matches	1	1	1

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