|
T501N70TOH |
T501N65TOH |
T501N60TOH |
Description |
Silicon Controlled Rectifier, 1350A I(T)RMS, 640000mA I(T), 7000V V(DRM), 7000V V(RRM), 1 Element, |
Silicon Controlled Rectifier, 1350A I(T)RMS, 640000mA I(T), 6500V V(DRM), 6500V V(RRM), 1 Element, |
Silicon Controlled Rectifier, 1350A I(T)RMS, 640000mA I(T), 6000V V(DRM), 6000V V(RRM), 1 Element, |
Reach Compliance Code |
unknown |
unknown |
unknown |
Nominal circuit commutation break time |
650 µs |
650 µs |
650 µs |
Configuration |
SINGLE |
SINGLE |
SINGLE |
Critical rise rate of minimum off-state voltage |
2000 V/us |
2000 V/us |
2000 V/us |
Maximum DC gate trigger current |
350 mA |
350 mA |
350 mA |
Maximum DC gate trigger voltage |
2.5 V |
2.5 V |
2.5 V |
Maximum holding current |
350 mA |
350 mA |
350 mA |
JESD-30 code |
O-CXDB-X4 |
O-CXDB-X4 |
O-CXDB-X4 |
Maximum leakage current |
200 mA |
200 mA |
200 mA |
On-state non-repetitive peak current |
13500 A |
13500 A |
13500 A |
Number of components |
1 |
1 |
1 |
Number of terminals |
4 |
4 |
4 |
Maximum on-state current |
640000 A |
640000 A |
640000 A |
Maximum operating temperature |
125 °C |
125 °C |
125 °C |
Minimum operating temperature |
-40 °C |
-40 °C |
-40 °C |
Package body material |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
Package shape |
ROUND |
ROUND |
ROUND |
Package form |
DISK BUTTON |
DISK BUTTON |
DISK BUTTON |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Maximum rms on-state current |
1350 A |
1350 A |
1350 A |
Off-state repetitive peak voltage |
7000 V |
6500 V |
6000 V |
Repeated peak reverse voltage |
7000 V |
6500 V |
6000 V |
surface mount |
YES |
YES |
YES |
Terminal form |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
Terminal location |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
Trigger device type |
SCR |
SCR |
SCR |
Base Number Matches |
1 |
1 |
1 |