BSN20 datasheet, PDF - EEWORLD Datasheet

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BSN20: Description173mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size757KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BSN20 Overview

173mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

BSN20 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	0.1 A
Maximum drain current (ID)	0.173 A
Maximum drain-source on-resistance	20 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

BSN20 Related Products

	BSN20	934012500235	934012500215	BSN20/T1
Description	173mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	173mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	173mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	173mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	NXP	NXP	NXP	NXP
Reach Compliance Code	compliant	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V	50 V	50 V
Maximum drain current (ID)	0.173 A	0.173 A	0.173 A	0.173 A
Maximum drain-source on-resistance	20 Ω	20 Ω	20 Ω	20 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF	8 pF	8 pF	8 pF
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Tin (Sn)	TIN	TIN	TIN
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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