2SJ492-S datasheet, PDF - EEWORLD Datasheet

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2SJ492-S: DescriptionPower Field-Effect Transistor, 20A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size157KB，8 Pages; ManufacturerNEC Electronics

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2SJ492-S Overview

Power Field-Effect Transistor, 20A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

2SJ492-S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NEC Electronics
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	40 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.185 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2SJ492-S Related Products

	2SJ492-S	2SJ492-ZJ
Description	Power Field-Effect Transistor, 20A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN	Power Field-Effect Transistor, 20A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Maker	NEC Electronics	NEC Electronics
Parts packaging code	TO-262AA	D2PAK
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	4
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	40 mJ	40 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	20 A	20 A
Maximum drain-source on-resistance	0.185 Ω	0.185 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA	TO-263AB
JESD-30 code	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	80 A	80 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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