66168
PROTON RADIATION TOLERANT OPTOCOUPLER
(Pin-for-Pin Replacement for 4N49)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Rev. A 4/25/00
Features:
•
•
•
•
•
High Reliability
Base lead provided for conventional transistor
biasing
Rugged package
Stability over wide temperature
+1000V electrical isolation
Applications:
•
•
•
•
•
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
The
66168
is a modified 4N49 (LED) designed to be more tolerant to proton radiation. The 66168 optocoupler is packaged
in a hermetically sealed TO-5. This device can be supplied to customer specifications as well as tested in accordance with
MIL-PRF-19500/548 (4N49) to JAN, JANTX, JANTXV and JANS levels.
ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage......................................................................................................................................................... +1kV
Emitter-Base Voltage................................................................................................................................................................ 7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) .......................... 40V
Collector-Base Voltage ........................................................................................................................................................... 45V
Reverse Input Voltage ............................................................................................................................................................. 2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................40mA
Peak Forward Input Current (Value applies for tw
<
1
µ
s, PRR
<
300 pps) ............................................................................. 1A
Continuous Collector Current ..............................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW
Storage Temperature..........................................................................................................................................-65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C
Lead Solder Temperature (10 seconds max.) ................................................................................................................... 240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
Package Dimensions
Schematic Diagram
6 LEADS
0 .0 1 6 Ø [0 .4 1 ]
0 .0 1 9 Ø [0 .4 8 ]
0 .0 4 0 [1 .0 2 ]
M AX.
0 .3 0 5 [7 .7 5 ]
0 .3 3 5 [8 .5 1 ]
0 .5 0 0 [1 2 .7 0 ]
M IN .
0 .1 5 5 [3 .9 4 ]
0 .1 8 5 [4 .7 0 ]
5
5 A
6
7
2
1
3
C
E
3
1
2
0 .0 2 2 Ø [5 .0 8 ]
0 .0 4 5 [1 .1 4 ]
0 .0 2 9 [0 .7 3 ]
45°
0 .0 3 4 [0 .8 6 4 ]
0 .0 2 8 [0 .7 1 1 ]
7 K
B
N O T E : A L L L IN E A R D IM E N S IO N S A R E IN IN C H E S ( M IL L IM E T E R S )
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972)272-3571
•
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
3 - 16
66168
Rev. A 4/25/00
PROTON RADIATION TOLERANT OPTOCOUPLER
(Pin-for-Pin Replacement for 4N49)
ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified.
PARAMETER
Input Diode Static Reverse Current
Input Diode Static Forward Voltage
Input Diode Static Forward Voltage
Input Diode Static Forward Voltage
-55 C
+25
°
C
+100
°
C
°
SYMBOL
I
R
V
F
V
F
V
F
MIN
1.0
0.8
0.7
TYP
MAX
100
2.4
UNITS
µA
V
V
V
TEST CONDITIONS
V
R
= 2V
I
F
= 10mA
I
F
= 10mA
I
F
= 10mA
NOTE
1.7
2.0
1.8
OUTPUT TRANSISTOR
T
A
= 25
°
C unless otherwise specified.
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Off-State Collector Current
+100
°
C
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C(OFF)
I
C(OFF)
MIN
45
40
7
TYP
MAX
UNITS
V
V
V
TEST CONDITIONS
I
C
= 100
µ
A, I
B
= 0, I
F
= 0
I
C
= 1mA, I
B
= 0, I
F
= 0
I
C
= 0mA, I
E
= 100
µ
A, I
F
= 0
V
CE
= 20V, I
F
= 0mA, I
B
= O
V
CE
= 20V, I
F
= 0mA, I
B
= O
NOTE
100
100
nA
µ
A
COUPLED CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified.
PARAMETER
On State Collector Current
On State Collector Current
On State Collector Current
Collector-Emitter Saturation Voltage
Input to Output Internal Resistance
Input to Output Capacitance
Rise Time-Phototransistor Operation
Fall Time-Phototransistor Operation
+100
°
C
-55
°
C
SYMBOL
I
C(ON)
I
C(ON)
I
C(ON)
V
CE(SAT)
R
IO
C
IO
t
r
t
f
t
r
t
f
MIN
2.0
0.5
0.7
TYP
MAX
UNITS
mA
mA
mA
TEST CONDITIONS
V
CE
= 5V, I
F
= 1mA
V
CE
= 0.4V, I
F
= 2mA
V
CE
= 5V, I
F
= 2mA
I
F
= 2mA, I
C
= 2mA, I
B
= 0
V
IN-OUT
= 500V
f = 1MHz, V
IN-OUT
= 1kV
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
Ω
, I
B
= 0
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
Ω
, I
B
= 0
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
Ω
, I
E
= 0
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
Ω
, I
E
= 0
NOTE
2
0.3
10
11
V
Ω
1
1
2.5
10
10
5
25
25
pF
µ
s
µ
s
Rise Time-Photodiode Operation
Fall Time-Photodiode Operation
0.85
0.85
3
3
µ
s
µ
s
NOTES:
1.
These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
2.
This parameter must be measured using pulse techniques (t
W
= 100
µ
s duty cycle
<
1%).
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
Input Current, Low Level
Input Current, High Level
Supply Voltage
Operating Temperature
SYMBOL
I
FL
I
FH
V
CE
T
A
MIN
0
2
5
-55
MAX
90
10
10
100
UNITS
µ
A
mA
V
°
C
SELECTION GUIDE
PART NUMBER
66168-001
66168-101
66168-103
66168-105
66168-300
PART DESCRIPTION
Single Channel Commercial Proton Radiation Tolerant (4N49) Optocoupler (0
°
to 70
°
C)
Single Channel Proton Radiation Tolerant (4N49) Screened to JAN level
Single Channel Proton Radiation Tolerant (4N49) Screened to JANTX level
Single Channel Proton Radiation Tolerant (4N49) Screened to JANTXV level
Single Channel Proton Radiation Tolerant (4N49) Screened to JANS level
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972)272-3571
•
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
3 - 17
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