JANTX1N4956 datasheet, PDF - EEWORLD Datasheet

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JANTX1N4956: DescriptionZener Diode, 8.2V V(Z), 5%, 5W, Silicon, Unidirectional,; CategoryDiscrete semiconductor diode; File Size89KB，22 Pages; ManufacturerBkc Semiconductors Inc.

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Zener Diode, 8.2V V(Z), 5%, 5W, Silicon, Unidirectional,

JANTX1N4956 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Bkc Semiconductors Inc.
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	0.75 Ω
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Maximum knee impedance	600 Ω
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Nominal reference voltage	8.2 V
Maximum reverse current	50 µA
surface mount	NO
technology	ZENER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL
Voltage temperatureCoeff-Max	4.92 mV/°C
Maximum voltage tolerance	5%
Working test current	150 mA
Base Number Matches	1

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This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly

different in format due to electronic conversion processes. Actual technical content will be the same.

The documentation and process conversion measures necessary to

comply with this revision shall be completed by 10 November 1999.

INCH POUND

MIL-PRF-19500/356F

10 August 1999

SUPERSEDING

MIL-S-19500/356E

11 November 1996

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR

TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,

1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,

AND C AND D TOLERANCE SUFFIX DEVICES

JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Five levels of product

assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for

each unencapsulated device type die.

1.2 Physical dimensions. See figures 1, 2, 3, 4, and 5.

1.3 Maximum ratings. Maximum ratings are as shown in columns 8 and 10 of table IV herein, and as follows:

= 5 W at T

= +65°C, L = .375 inch (9.53 mm), derate 45 mW/°C above T

= +65°C (1N4954 through 1N4996). 1/

= 5 W at T

= +25°C, L = .375 inch (9.53 mm), derate 33 mW/°C above T

= +25°C (1N5968, 1N5969, 1N6632 through

1N6637). 1/

= 5 W at T

= +125°C, derate 100 mW/°C above T

= +125°C for US suffix devices.

-55°C < T

< +175°C (ambient); -65°C < T

STG

< +175°C (ambient).

Barometric pressure reduced (high altitude operation): 8 mm Hg.

1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2, 12, and 14 of table IV herein,

and as follows:

= 22°C/W (max) at L = .375 inch (9.53 mm) (1N4954 through 1N4996). 1/

= 30°C/W (max) at L = .375 inch (9.53 mm) (1N5968, 1N5969, 1N6632 through 1N6637). 1/

JEC

= 7°C/W (max) (surface mount) (1N4954 through 1N4996).

JEC

= 10°C/W (max) (surface mount) (1N5968, 1N5969, 1N6632 through 1N6637).

1/ Does not apply to surface mount devices.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,

Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end

of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

MIL-PRF-19500/356F

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not

include documents cited in other sections of this specification or recommended for additional information or as examples. While

every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified

requirements in documents cited in sections 3 and 4 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this

document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of

the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see

6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500

STANDARD

MILITARY

MIL-STD-750

- Test Methods for Semiconductor Devices.

Semiconductor Devices, General Specification for.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of

this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific

exemption has been obtained.

3. REQUIREMENTS

3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for

listing on the applicable qualified products list before contract award (see 4.2 and 6.3).

3.2 Associated detail specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified

herein.

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in

MIL-PRF-19500, and as follows.

3.3.1 Symbols.

C suffix ............................................

D suffix ............................................

...................................................

US suffix..........................................

JANHC ............................................

JANKC.............................................

±2 percent voltage tolerance.

±1 percent voltage tolerance.

Temperature, end cap.

Unleaded or surface mounted devices (square end caps).

High reliability product assurance level for unencapsulated devices.

Space reliability product assurance level for unencapsulated devices.

3.4 Design, construction, and physical dimensions. The design, construction, and physical dimensions for the purpose of

interchangeability shall be as specified in on figures 1, 2, 3, and 4 herein.

3.4.1 Construction. Shall be in accordance with MIL-PRF-19500, A.3.15.1, A.3.15.2, A.3.15.3, A.3.15.6, A.3.15.7, A.3.15.8 and

this document. "US" version devices shall be structurally identical to the axial leaded type except for lead attachment.

3.4.1.1 Diodes with V

6.8 V dc. Diodes with V

6.8 V dc shall utilize category I metallurgical bonds (see MIL-PRF-19500).

3.4.1.2 Diodes with V

< 6.8 V dc. Diodes with V

< 6.8 V dc may utilize category I, II, or category III metallurgical bonds (see

MIL-PRF-19500).

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