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CDLL5236B

Description
Zener Diode, 7.5V V(Z), 5%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2
CategoryDiscrete semiconductor    diode   
File Size111KB,2 Pages
ManufacturerCompensated Devices Inc.
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CDLL5236B Overview

Zener Diode, 7.5V V(Z), 5%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2

CDLL5236B Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
package instructionO-LELF-R2
Reach Compliance Codeunknown
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
JESD-609 codee0
Maximum knee impedance500 Ω
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Nominal reference voltage7.5 V
Maximum reverse current3 µA
surface mountYES
technologyZENER
Terminal surfaceTIN LEAD
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance5%
Working test current20 mA
Base Number Matches1
• ZENER DIODES
•LEADLESS PACKAGE FOR SURFACE MOUNT
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
CDLL5221
thru
CDLL5272B
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Derating: 10 mW / °C above TEC = +125°C
Forward Voltage: @ 200 mA: 1.1 Volts maximum
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
CDI
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE
VZ @ lZT
(Note 1 & 3)
VOLTS
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
87
91
100
110
MAXIMUM
ZENER IMPEDANCE
(Note 2)
ZZT @ lZT ZZK@lZK=0.25mA
OHMS
30
30
30
30
29
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
330
370
400
500
750
OHMS
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
2000
2200
2300
2600
3000
MAXIMUM
REVERSE CURRENT
lR @ VR
TEST
CURRENT
I ZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
1.5
1.4
1.4
1.3
1.1
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µ
A
100
100
75
75
50
25
15
10
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
62
68
69
76
84
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100 ˚C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
OJX): 35
˚C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
NOTE 1
NOTE 2
NOTE 3
“B” suffix = +5.0%, “A” suffix = +10%, no suffix = + 20%, "C" suffix = + 2% and "D" suffix = + 1%.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to
10% of1ZT.
Nominal Zener voltage is measured with the device junction in thermal equilibrium at an
ambient temperature of 25°C + 3°C.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
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