LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
SEME
2N2222A
HIGH SPEED
MEDIUM POWER, NPN
SWITCHING TRANSISTOR
5.33 (0.210)
4.32 (0.170)
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
3
2
1
TO–18 METAL PACKAGE
Underside View
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
J
, T
STG
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
75V
40V
6V
800mA
0.5mW
2.28mW / °C
1.2W
6.85mW / °C
–65 to +200°C
Prelim. 3/96
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
12.7 (0.500)
min.
LAB
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
I
EBO
I
BL
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Collector – Base Cut-off Current
Emitter Cut-off Current (I
C
= 0)
Base Current
ON CHARACTERISTICS
V
CE(sat)
1
V
BE(sat)
1
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
h
FE
DC Current Gain
I
C
= 150mA
I
C
= 150mA
I
C
= 500mA
f
T
C
ob
C
ib
hfe
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
2
I
C
= 20mA
Output Capacitance
Input Capacitance
Small Signal Current Gain
V
CB
= 10V
V
EB
= 0.5V
I
C
= 1mA
I
C
= 10mA
V
CE
= 20V
I
E
= 0
I
C
= 0
V
CE
= 10V
V
CE
= 10V
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
I
C
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
T
A
= –55°C
V
CE
= 10V
1
V
CE
= 1V
1
SEME
2N2222A
Test Conditions
I
C
= 10mA
I
C
= 10µA
I
E
= 10µA
V
CE
= 60V
I
E
= 0
I
C
= 0
V
CE
= 60V
I
B
= 0
I
E
= 0
I
C
= 0
V
EB(off)
= 3V
V
CB
= 60V
T
A
= 150°C
V
EB
= 3V
V
EB(off)
= 3V
Min.
40
75
6
Typ.
Max. Unit
V
V
V
10
0.01
10
10
20
0.3
1
nA
µA
nA
nA
V
V
0.6
35
50
75
35
100
50
40
300
1.2
2
—
300
V
CE
= 10V
1
f = 100MHz
f = 100kHz
f = 100kHz
f = 1kHz
f = 1kHz
MHz
8
25
pF
—
50
75
300
375
10
25
225
60
t
d
t
r
t
s
t
f
SWITCHING CHARACTERISTICS
Delay Time
V
CC
= 30V
Rise Time
Storage Time
Fall Time
I
C
= 150mA
V
CC
= 30V
V
BE(off)
= 0.5V
I
B1
= 15mA
I
C
= 150mA
I
B1
= I
B2
= 15mA
ns
ns
NOTES:
1) Pulse test: t
p
≤
300µs ,
δ ≤
2%
2) f
T
is defined as the frequency at which h
FE
extrapolates to unity.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/96
Microcontroller MCU
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