HB52RD168GB-A6FL datasheet, PDF

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HB52RD168GB-A6FL: Description128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 100 MHz Memory Bus, 1-Bank Module (16 pcs of 16 M 】 4 components) PC100 SDRAM; Categorystorage storage; File Size128KB，22 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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HB52RD168GB-A6FL Overview

128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 100 MHz Memory Bus, 1-Bank Module (16 pcs of 16 M 】 4 components) PC100 SDRAM

HB52RD168GB-A6FL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ELPIDA
Parts packaging code	DIMM
package instruction	DIMM, DIMM144,20
Contacts	144
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	144
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,20
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.016 A
Maximum slew rate	1.76 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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HB52RD168GB-F

Description

Features

128 MB Unbuffered SDRAM Micro DIMM

16-Mword

64-bit, 100 MHz Memory Bus, 1-Bank Module

(16 pcs of 16 M

4 components)

PC100 SDRAM

E0009H10 (1st edition)

(Previous ADE-203-1153A (Z))

Jan. 19, 2001

The HB52RD168GB is a 16M

1 bank Synchronous Dynamic RAM Micro Dual In-line Memory Module

(Micro DIMM), mounted 16 pieces of 64-Mbit SDRAM (HM5264405FTB) sealed in TCP package and 1 piece

of ser ia l EEP RO M (2- kbit EEP RO M) for P rese nce De te ct (P D). An outline of the produc t is 144-pin Zig Za g

Dua l tabs socke t type compa ct and thin pac kage . The ref ore, it make s high density mounting possible without

surf ace mount tec hnology. It provide s common data inputs and outputs. De coupling ca pac itor s ar e mounted

beside TCP on the module board.

Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which would be

electrical defects.

•

144-pin Zig Zag Dual tabs socket type



Outline: 38.00 mm (Length)

30.00 mm (Height)

3.80 mm (Thickness)



Lead pitch: 0.50 mm

•

3.3 V power supply

•

Clock frequency: 100 MHz (max)

•

LVTTL interface

•

Data bus width:

64 Non parity

•

Single pulsed

RAS

•

4 Banks can operates simultaneously and independently

•

Burst read/write operation and burst read/single write operation capability

•

Programmable burst length : 1/2/4/8/full page

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

HB52RD168GB-A6FL Related Products

	HB52RD168GB-A6FL	HB52RD168GB-B6F	HB52RD168GB-F
Description	128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 100 MHz Memory Bus, 1-Bank Module (16 pcs of 16 M 】 4 components) PC100 SDRAM	128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 100 MHz Memory Bus, 1-Bank Module (16 pcs of 16 M 】 4 components) PC100 SDRAM	128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 100 MHz Memory Bus, 1-Bank Module (16 pcs of 16 M 】 4 components) PC100 SDRAM
Is it Rohs certified?	incompatible	incompatible	-
Maker	ELPIDA	ELPIDA	-
Parts packaging code	DIMM	DIMM	-
package instruction	DIMM, DIMM144,20	DIMM, DIMM144,20	-
Contacts	144	144	-
Reach Compliance Code	unknown	unknown	-
ECCN code	EAR99	EAR99	-
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-
Maximum access time	6 ns	8 ns	-
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
Maximum clock frequency (fCLK)	100 MHz	100 MHz	-
I/O type	COMMON	COMMON	-
JESD-30 code	R-XDMA-N144	R-XDMA-N144	-
memory density	1073741824 bit	1073741824 bit	-
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	-
memory width	64	64	-
Humidity sensitivity level	1	1	-
Number of functions	1	1	-
Number of ports	1	1	-
Number of terminals	144	144	-
word count	16777216 words	16777216 words	-
character code	16000000	16000000	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	65 °C	65 °C	-
organize	16MX64	16MX64	-
Output characteristics	3-STATE	3-STATE	-
Package body material	UNSPECIFIED	UNSPECIFIED	-
encapsulated code	DIMM	DIMM	-
Encapsulate equivalent code	DIMM144,20	DIMM144,20	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-
Peak Reflow Temperature (Celsius)	225	225	-
power supply	3.3 V	3.3 V	-
Certification status	Not Qualified	Not Qualified	-
refresh cycle	4096	4096	-
self refresh	YES	YES	-
Maximum standby current	0.016 A	0.016 A	-
Maximum slew rate	1.76 mA	1.76 mA	-
Maximum supply voltage (Vsup)	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	3 V	3 V	-
Nominal supply voltage (Vsup)	3.3 V	3.3 V	-
surface mount	NO	NO	-
technology	CMOS	CMOS	-
Temperature level	COMMERCIAL	COMMERCIAL	-
Terminal form	NO LEAD	NO LEAD	-
Terminal pitch	0.5 mm	0.5 mm	-
Terminal location	DUAL	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-

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