2N1936.MOD datasheet, PDF - EEWORLD Datasheet

2N1936.MOD: DescriptionPower Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63; CategoryDiscrete semiconductor The transistor; File Size69KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N1936.MOD Overview

Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-63
Number of components	1
Polarity/channel type	NPN
Certification status	Not Qualified
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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