FDS6898AL86Z datasheet, PDF - EEWORLD Datasheet

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FDS6898AL86Z: DescriptionPower Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8; CategoryDiscrete semiconductor The transistor; File Size258KB，8 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FDS6898AL86Z Overview

Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

FDS6898AL86Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	9.4 A
Maximum drain-source on-resistance	0.014 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	38 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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FDS6898A

OCTOBER 2001

FDS6898A

Dual N-Channel Logic Level PWM Optimized PowerTrench

MOSFET

General Description

These N-Channel Logic Level MOSFETs are produced

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

•

9.4 A, 20 V

DS(ON)

= 14 mΩ @ V

= 4.5 V

DS(ON)

= 18 mΩ @ V

= 2.5 V

•

Low gate charge (16 nC typical)

•

High performance trench technology for extremely

low R

DS(ON)

•

High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

– Continuous

– Pulsed

=25 C unless otherwise noted

Parameter

Ratings

(Note 1a)

Units

9.4

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

–55 to +150

°C

, T

STG

Operating and Storage Junction Temperature Range

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

Package Marking and Ordering Information

Device Marking

FDS6898A

Device

FDS6898A

Reel Size

13’’

Tape width

12mm

Quantity

2500 units

Fairchild Semiconductor Corporation

FDS6898A Rev C (W)

FDS6898AL86Z Related Products

	FDS6898AL86Z	FDS6898AD84Z	FDS6898AF011
Description	Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8	Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8	Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Maker	Fairchild	Fairchild	Fairchild
Parts packaging code	SOT	SOT	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Contacts	8	8	8
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	20 V	20 V
Maximum drain current (ID)	9.4 A	9.4 A	9.4 A
Maximum drain-source on-resistance	0.014 Ω	0.014 Ω	0.014 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	2	2	2
Number of terminals	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	38 A	38 A	38 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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