V54C316162VBST-55 datasheet, PDF

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V54C316162VBST-55: DescriptionSynchronous DRAM, 1MX16, 5.3ns, CMOS, PDSO50; Categorystorage storage; File Size324KB，21 Pages; ManufacturerMosel Vitelic Corporation ( MVC ); Websitehttp://www.moselvitelic.com

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V54C316162VBST-55 Overview

Synchronous DRAM, 1MX16, 5.3ns, CMOS, PDSO50

V54C316162VBST-55 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mosel Vitelic Corporation ( MVC )
package instruction	TSOP, TSOP50,.46,32
Reach Compliance Code	unknown
Maximum access time	5.3 ns
Maximum clock frequency (fCLK)	182 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G50
JESD-609 code	e0
memory density	16777216 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of terminals	50
word count	1048576 words
character code	1000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP50,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.155 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Base Number Matches	1

V54C316162VBST-55 Related Products

	V54C316162VBST-55	V54C316162VBST-7	V54C316162VBST-5
Description	Synchronous DRAM, 1MX16, 5.3ns, CMOS, PDSO50	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50	Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )
package instruction	TSOP, TSOP50,.46,32	TSOP, TSOP50,.46,32	TSOP, TSOP50,.46,32
Reach Compliance Code	unknown	unknown	unknown
Maximum access time	5.3 ns	5.5 ns	5 ns
Maximum clock frequency (fCLK)	182 MHz	143 MHz	200 MHz
I/O type	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50
JESD-609 code	e0	e0	e0
memory density	16777216 bit	16777216 bit	16777216 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16
Number of terminals	50	50	50
word count	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000
Maximum operating temperature	70 °C	70 °C	70 °C
organize	1MX16	1MX16	1MX16
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	TSOP	TSOP
Encapsulate equivalent code	TSOP50,.46,32	TSOP50,.46,32	TSOP50,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.155 mA	0.14 mA	0.16 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL
Base Number Matches	1	1	1

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