SMBJ18CAR5 datasheet, PDF - EEWORLD Datasheet

SMBJ18CAR5: DescriptionTrans Voltage Suppressor Diode, 600W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN; CategoryDiscrete semiconductor diode; File Size208KB，7 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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SMBJ18CAR5 Overview

Trans Voltage Suppressor Diode, 600W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	R-PDSO-C2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage	22.1 V
Minimum breakdown voltage	20 V
Breakdown voltage nominal value	21.05 V
Maximum clamping voltage	29.2 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	BIDIRECTIONAL
Maximum power dissipation	3 W
Maximum repetitive peak reverse voltage	18 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Base Number Matches	1

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