V58C2128164SBT6 datasheet, PDF

V58C2128164SBT6: DescriptionDDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66; Categorystorage storage; File Size917KB，60 Pages; ManufacturerProMOS Technologies Inc

Download Datasheet Parametric View All

V58C2128164SBT6 Overview

DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ProMOS Technologies Inc
Parts packaging code	TSSOP2
package instruction	TSSOP, TSSOP66,.46
Contacts	66
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
JESD-609 code	e0
length	22.22 mm
memory density	134217728 bit
Memory IC Type	DDR DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	66
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.015 A
Maximum slew rate	0.325 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm
Base Number Matches	1

MCU application architecture arrangement: Application architectureSimple front-end and back-end sequential execution program: the method used by most people, no need to consider the specific architecture of the program, just write the applica...; Jacktang Microcontroller MCU

Application of power amplifier in electrostatic suspension system: The dry coupling ultrasonic testing method does not require the application of liquid coupling agents such as water or oil on the surface of the material to be tested. It is easy to operate and flexib...; aigtek01 Integrated technical exchanges

Inexpensive fiber optic transceiver: I want to ask you guys, how are the 30-yuan fiber optic transceivers made? Even if they are assembled by yourself, don't you provide customer service? I heard from customers that some transceivers wil...; honesty0303 Security Electronics

Design of wireless network sensor based on Bluetooth protocol: Abstract: Based on the sensor interface standard IEEE1451.2, this paper introduces some specific technical points for the realization of wireless networked sensors, proposes a wireless networked senso...; ohahaha RF/Wirelessly

Design and implementation of a fast and effective broadband power amplifier matching circuit: Abstract: A fast and effective method is proposedfor the design of LDMOS broadband power amplifier matching circuit usingthe ADS software. The simulation results are: in the frequency range of 1.3 GHz...; btty038 RF/Wirelessly

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components