DMN2027LK3 datasheet, PDF - EEWORLD Datasheet

DMN2027LK3: Description11.6 A, 20 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; Categorysemiconductor Discrete semiconductor; File Size211KB，8 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DMN2027LK3 Overview

11.6 A, 20 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	20 V
Processing package description	GREEN, PLASTIC, TO-252, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	DISCONTINUED
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	11.6 A
Maximum drain on-resistance	0.0210 ohm
Maximum leakage current pulse	46.8 A

	DMN2027LK3	DMN2027LK3-13
Description	11.6 A, 20 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	11.6 A, 20 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Number of terminals	2	2
Minimum breakdown voltage	20 V	20 V
Processing package description	GREEN, PLASTIC, TO-252, 3 PIN	GREEN, PLASTIC, TO-252, 3 PIN
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	DISCONTINUED	DISCONTINUED
packaging shape	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE TIN	MATTE TIN
Terminal location	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN	DRAIN
Number of components	1	1
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Channel type	N-CHANNEL	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	11.6 A	11.6 A
Maximum drain on-resistance	0.0210 ohm	0.0210 ohm
Maximum leakage current pulse	46.8 A	46.8 A

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